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NTD24N06T4G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1 Publication Order Number:
NTD24N06/D
NTD24N06
Power MOSFET
60 V, 24 A, N−Channel DPAK/IPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
v10 ms)
V
GS
V
GS
±20
±30
Vdc
Drain Current
− Continuous @ T
A
= 25°C, T
J
= 150°C
− Continuous @ T
A
= 25°C, T
J
= 175°C
− Continuous @ T
A
= 100°C, T
J
= 175°C
− Single Pulse (t
p
v10 ms), T
J
= 175°C
I
D
I
D
I
D
I
DM
24
27
19
80
Adc
Adc
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
62.5
0.42
1.88
1.36
W
W/°C
W
W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc,
L = 1.0 mH, I
L
(pk) = 18 A, V
DS
= 60 Vdc)
E
AS
162 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
2.4
80
110
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.
2. When surface mounted to an FR−4 board using the minimum recommended
pad size.
N−Channel
D
S
G
http://onsemi.com
60 V
32 mW
R
DS(on)
TYP
24 A
I
D
MAXV
(BR)DSS
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
1
2
3
4
1
Gate
3
Source
2
Drain
4
Drain
IPAK
CASE 369D
(Straight Lead)
STYLE 2
1
2
3
4
AYWW
24
N06G
AYWW
24
N06G
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
A = Assembly Location*
Y = Year
WW = Work Week
24N06 = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD24N06
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
71.1
70.4
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
−
3.03
7.0
4.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 10 Adc)
(V
GS
= 10 Vdc, I
D
= 12 Adc)
R
DS(on)
−
−
32
32
42
−
mW
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 10 Vdc, I
D
= 24 Adc)
(V
GS
= 10 Vdc, I
D
= 12 Adc, T
J
= 150°C)
V
DS(on)
−
−
−
0.8
0.8
0.7
1.15
−
−
Vdc
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 12 Adc) g
FS
− 15 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 846 1200 pF
Output Capacitance C
oss
− 252 350
Transfer Capacitance C
rss
− 68 95
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 24 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1 W) (Note 3)
t
d(on)
− 10 20 ns
Rise Time t
r
− 24 50
Turn−Off Delay Time t
d(off)
− 25 50
Fall Time t
f
− 27 60
Gate Charge
(V
DS
= 48 Vdc, I
D
= 24 Adc,
V
GS
= 10 Vdc) (Note 3)
Q
T
− 24 48 nC
Q
1
− 5.0 −
Q
2
− 11.5 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 24 Adc, V
GS
= 0 Vdc)
(I
S
= 24 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
−
0.95
1.0
0.89
1.15
−
−
Vdc
Reverse Recovery Time
(I
S
= 24 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 49 −
ns
t
a
− 35 −
t
b
− 13 −
Reverse Recovery Stored Charge Q
RR
− 0.096 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
†
NTD24N06G DPAK
(Pb−Free)
75 Units / Rail
NTD2406−1G IPAK
(Pb−Free)
75 Units / Rail
NTD24N06T4G DPAK
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD24N06
http://onsemi.com
3
0
0.06
3020
0.04
0.02
0
10 40
0.08
5
0
2
1.6
1.2
1.4
1
0.8
0.6
1
1000
10000
04
20
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.06
3020
0.04
0.02
0
10 40
Figure 3. On−Resistance versus
Gate−to−Source Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
50
−50 50250−25 75 125100
23 8
0403020 6
0
10
3
10
30
9 V
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
T
J
= 100°C
V
GS
= 10 V
V
GS
= 15 V
150 175
V
GS
= 0 V
I
D
= 12 A
V
GS
= 10 V
40
0.08
V
GS
= 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
50
T
J
= 150°C
T
J
= 100°C
20
0
50
10
30
40
45
T
J
= 25°C
T
J
= −55°C
50
10
8 V
7 V
6 V
5.5 V
5 V
4.5 V
1.8
67
100
P1-P3P4-P6P7-P8

NTD24N06T4G

Mfr. #:
Buy NTD24N06T4G
Manufacturer:
ON Semiconductor
Description:
MOSFET 24A 60V N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
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