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DMN53D0L-7

P1-P3P4-P5
DMN53D0L
Document number: DS37029 Rev. 2 - 2
1 of 5
www.diodes.com
May 2014
© Diodes Incorporated
DMN53D0L
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
50V
1.6 @ V
GS
= 10V
500 mA
2.5 @ V
GS
= 4.5V
200 mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Features and Benefits
• N-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected to 2KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN53D0L-7 SOT23 3000/Tape & Reel
DMN53D0L-13 SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2014 2015 2016 2017 2018 2019 2020
Code B C D E F G H
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
ESD protected
Equivalent Circuit
D
G
S
Top View
53E = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Shanghai A/T SiteChengdu A/T Site
Y
M
Y
DMN53D0L
Document number: DS37029 Rev. 2 - 2
2 of 5
www.diodes.com
May 2014
© Diodes Incorporated
DMN53D0L
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
50 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 6)
I
D
500 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
P
D
370 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θ
JA
344
°C/W
Total Power Dissipation (Note 6)
P
D
540 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
236
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
50
⎯ ⎯
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1.0 µA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
10 µA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.8
⎯
1.5 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
⎯
⎯
⎯
⎯
⎯
1.6
2.5
4.5
Ω
V
GS
= 10V, I
D
= 500mA
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 2.5V, I
D
= 100mA
Source-Drain Diode Forward Voltage
V
SD
⎯ ⎯
1.4 V
V
GS
= 0V, I
S
= 500mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
46
⎯
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
5.3
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
4.0
⎯
pF
Total Gate Charge
Q
g
⎯
0.6
⎯
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
⎯
0.2
⎯
nC
Gate-Drain Charge
Q
gd
⎯
0.1
⎯
nC
Turn-On Delay Time
t
D(on)
⎯
2.7
⎯
ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 25, I
D
= 200mA
Turn-On Rise Time
t
r
⎯
2.5
⎯
ns
Turn-Off Delay Time
t
D(off)
⎯
19
⎯
ns
Turn-Off Fall Time
t
f
⎯
11
⎯
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN53D0L
Document number: DS37029 Rev. 2 - 2
3 of 5
www.diodes.com
May 2014
© Diodes Incorporated
DMN53D0L
NEW PRODUCT
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
0.3
0.6
0.9
1.2
1.5
012345
V= 1.8V
GS
V= 3.5V
GS
V = 10V
GS
V= 2V
GS
V= 2.5V
GS
V= 3V
GS
V= 4.5V
GS
V= 5V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
ENT (A)
D
0
0.2
0.4
0.6
0.8
1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V= 5V
DS
T = 150°C
A
T = 125°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.5
0.6
0.7
0.8
0.9
1
0 0.2 0.4 0.6 0.8 1
V= 5V
GS
V = 10V
GS
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.5
1
1.5
2
2.5
0 0.2 0.4 0.6 0.8 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
V=5V
I = 300mA
GS
D
V=V
I = 500mA
GS
D
10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V=5V
I= 300mA
GS
D
V=V
I = 500mA
GS
D
10
P1-P3P4-P5

DMN53D0L-7

Mfr. #:
Buy DMN53D0L-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
Lifecycle:
New from this manufacturer.
Delivery:
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