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BAS21LT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 1999
November, 2016 − Rev. 18
1 Publication Order Number:
BAS19LT1/D
BAS19L, BAS20L, BAS21L,
BAS21DW5
High Voltage
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage
BAS19
BAS20
BAS21
V
R
120
200
250
Vdc
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
V
RRM
120
200
250
Vdc
Continuous Forward Current I
F
200 mAdc
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
I
FSM
2 A
Repetitive Peak Forward Current
(Pulse Train: T
ON
= 1 s, T
OFF
= 0.5 s)
I
FRM
0.6 A
Junction and Storage Temperature
Range
T
J
, T
stg
−55 to +150 °C
Power Dissipation (Note 1) P
D
385 mW
Electrostatic Discharge ESD HM < 500
MM < 400
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
HIGH VOLTAGE
SWITCHING DIODE
5
CATHODE
1
ANODE
MARKING DIAGRAMS
3
CATHODE
1
ANODE
4
CATHODE
3
ANODE
SOT−23 (TO−236)
CASE 318
STYLE 8
SC−88A (SOT−353)
CASE 419A
SOT−23
SC−88A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
1
2
3
1
Jx M G
G
x = P, R, or S
P = BAS19L
R = BAS20L
S = BAS21L or BAS21DW5
M = Date Code
G = Pb−Free Package
2
3
Jx M G
G
1
3
321
45
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
(Note: Microdot may be in either location)
www.onsemi.com
BAS19L, BAS20L, BAS21L, BAS21DW5
www.onsemi.com
2
THERMAL CHARACTERISTICS (SOT−23)
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 2)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
R
JA
556 °C/W
Total Device Dissipation Alumina Substrate
(Note 3)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction−to−Ambient
R
JA
417 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS (SC−88A)
Characteristic Symbol Max Unit
Power Dissipation (Note 4) P
D
385 mW
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
R
JA
328
3.0
°C/W
mW/°C
Maximum Junction Temperature T
Jmax
150 °C
Operating Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
2. FR−5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Voltage Leakage Current
(V
R
= 100 Vdc) BAS19
(V
R
= 150 Vdc) BAS20
(V
R
= 200 Vdc) BAS21
(V
R
= 100 Vdc, T
J
= 150°C) BAS19
(V
R
= 150 Vdc, T
J
= 150°C) BAS20
(V
R
= 200 Vdc, T
J
= 150°C) BAS21
I
R
−
−
−
−
−
−
0.1
0.1
0.1
100
100
100
Adc
Reverse Breakdown Voltage
(I
BR
= 100 Adc) BAS19
(I
BR
= 100 Adc) BAS20
(I
BR
= 100 Adc) BAS21
V
(BR)
120
200
250
−
−
−
Vdc
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
V
F
−
−
1.0
1.25
Vdc
Diode Capacitance (V
R
= 0, f = 1.0 MHz) C
D
− 5.0 pF
Reverse Recovery Time (I
F
= I
R
= 30 mAdc, I
R(REC)
= 3.0 mAdc, R
L
= 100) t
rr
− 50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BAS19L, BAS20L, BAS21L, BAS21DW5
www.onsemi.com
3
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 30 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
0.1 F
D.U.T.
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
I
R(REC)
= 3.0 mA
OUTPUT PULSE
(I
F
= I
R
= 30 mA; MEASURED
at I
R(REC)
= 3.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
V
F
, FORWARD VOLTAGE (V)
0.1
10
20
V
R
, REVERSE VOLTAGE (V)
1.0
0.1
0.01
0.001
50 80 110 140
170
1.6
0
V
R
, REVERSE VOLTAGE (V)
1.4
1.0
0.6
0.4
C
D
, DIODE CAPACITANCE (pF)
246 8
I
F
, FORWARD CURRENT (mA)
Figure 2. V
F
vs. I
F
Figure 3. I
R
vs. V
R
Figure 4. Capacitance
I
R
, REVERSE CURRENT (μA)
1.0
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
85°C
55°C
150°C
125°C
25°C
-55°C
200 230
0.8
1.2
1357
Cap
-40°C
260
150°C
125°C
85°C
55°C
25°C
30
0.001
t
p
, PULSE ON TIME (ms)
25
15
5
0
0.01 1 1000
Figure 5. Forward Surge Current
10
20
0.1 10 100
I
FSM
, FORWARD SURGE MAX CURRENT (A)
Based on square wave currents
T
J
= 25°C prior to surge
P1-P3P4-P6

BAS21LT1G

Mfr. #:
Buy BAS21LT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 250V 200mA
Lifecycle:
New from this manufacturer.
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