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MJB44H11T4-A

P1-P3P4-P6P7-P9P10-P11
This is information on a product in full production.
May 2014 DocID026340 Rev 1 1/11
MJB44H11T4-A
Automotive-grade
low voltage NPN power transistor
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• Designed for automotive applications and
AEC- Q101 qualified
• Low collector-emitter saturation voltage
• Fast switching speed
Applications
• Power amplifier
• Switching circuits
Description
This device is an NPN transistor manufactured
using new low voltage planar technology with
double metal process. The result is a transistor
which boasts exceptionally high gain performance
coupled with very low saturation voltage.
D PAK
2
1
3
TAB
Table 1. Device summary
Order codes Marking Package Packaging
MJB44H11T4-A MJB44H11-A D
2
PAK Tape and reel
www.st.com
Absolute maximum ratings MJB44H11T4-A
2/11 DocID026340 Rev 1
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CEO
Collector-emitter voltage (I
B
= 0) 80 V
V
EBO
Emitter-base voltage (I
C
= 0) 5 V
I
C
Collector current 10 A
I
CM
Collector peak current 20 A
P
TOT
Total dissipation at T
case
= 25 °C 50 W
TSTG
Storage temperature -55 to 150 °C
TJ
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case max 2.5 °C/W
R
thJA
Thermal resistance junction-ambient max 62.5 °C/W
DocID026340 Rev 1 3/11
MJB44H11T4-A Electrical characteristics
11
2 Electrical characteristics
T
case
= 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage (I
B
= 0)
I
C
= 30 mA 80 - V
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 80 V - 10 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V - 50 µA
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 8 A I
B
= 0.4 A - 1 V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 8 A I
B
= 0.8 A - 1.5 V
h
FE
(1)
DC current gain
I
C
= 2 A_ V
CE
= 1 V 60 -
I
C
= 4 A_ _ V
CE
= 1 V 40 -
P1-P3P4-P6P7-P9P10-P11

MJB44H11T4-A

Mfr. #:
Buy MJB44H11T4-A
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - Pre-Biased Automotive-grade low voltage NPN power transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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