TLDR6400
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 29-Apr-13
1
Document Number: 81155
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Intensity LED, Ø 5 mm Tinted Diffused Package
DESCRIPTION
This LED contains the double heterojunction (DH) GaAlAs on
GaAs technology.
This deep red LED can be utilized over a wide range of drive
current. It can be DC or pulse driven to achieve desired light
output.
The device is available in a tinted diffused 5 mm package
with a wide radiation angle.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
•Package: 5 mm
• Product series: standard
• Angle of half intensity: ± 30°
FEATURES
• Exceptional brightness
• Wide viewing angle
• Low forward voltage
• 5 mm (T-1¾") tinted diffused package
• Deep red color
• Very high intensity even at low drive currents
• Categorized for luminous intensity
• Outstanding material efficiency
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Bright ambient lighting conditions
• Battery powered equipment
• Indoor and outdoor information displays
• Portable equipment
• Telecommunication indicators
• General use
Note
(1)
Driving the LED in reverse direction is suitable for a short term application
19224
PARTS TABLE
PART COLOR
LUMINOUS INTENSITY
(mcd)
at I
F
(mA)
WAVELENGTH
(nm)
at I
F
(mA)
FORWARD VOLTAGE
(V)
at I
F
(mA)
TECHNOLOGY
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
TLDR6400 Red 35 70 - 20 - 648 - 20 - 1.8 2.2 20 GaAIAs on GaAs
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
TLDR6400
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage
(1)
V
R
6V
DC forward current I
F
50 mA
Surge forward current t
p
10 μs I
FSM
1A
Power dissipation P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 55 to + 100 °C
Soldering temperature t 5 s, 2 mm from body T
sd
260 °C
Thermal resistance junction/ambient R
thJA
350 K/W