IR21091SPBF

HALF-BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Logic and power ground +/- 5V offset.
Internal 500ns dead-time, and programmable
up to 5us with one external R
DT
resistor
Lower di/dt gate driver for better noise immunity
The dual function DT/SD pin input turns off both
channels.
Available in Lead-Free
Description
The IR21091(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependant high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
Packages
8 Lead PDIP
IR21091
(
S
) & (PbF)
Data Sheet No. PD60191 revD
8 Lead SOIC
V
OFFSET
600V max.
I
O
+/- 120 mA / 250 mA
V
OUT
10 - 20V
ton/off (typ.) 680 & 170 ns
Dead time 500 ns
(programmable up to 5uS)
Product Summary
www.irf.com 1
Typical Connection
IR21091(S)
V
CC
V
B
V
S
HO
LOCOM
IN
DT/SD
SD
IN
up to 600V
TO
LOAD
V
CC
dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to
3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-
conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high
side configuration which operates up to 600 volts.
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
IR21091
(
S
) & (PbF)
2 www.irf.com
Symbol Definition Min. Max. Units
V
B
High side floating absolute voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
DT/SD Programmable dead-time and shut-down pin voltage V
SS
- 0.3 V
CC
+ 0.3
V
IN
Logic input voltage V
SS
- 0.3 V
CC
+ 0.3
dV
S
/dt Allowable offset supply voltage transient 50 V/ns
P
D
Package power dissipation @ T
A
+25°C (8 Lead PDIP) 1.0
(8 Lead SOIC) 0.625
Rth
JA
Thermal resistance, junction to ambient (8 Lead PDIP) 125
(8 Lead SOIC) 200
T
J
Junction temperature 150
T
S
Storage temperature -50 150
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
V
°C/W
W
°C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS.
(Please refer to the Design Tip
DT97-3 for more details).
VB High side floating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Low side and logic fixed supply voltage 10 20
V
LO
Low side output voltage 0 V
CC
V
IN
Logic input voltage V
SS
V
CC
DT/SD Programmable dead-time and shut-down pin voltage V
SS
V
CC
T
A
Ambient temperature -40 125 °C
Symbol Definition Min. Max. Units
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating are tested with all supplies biased at 15V differential.
V
IR21091
(
S
) & (PbF)
www.irf.com 3
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, DT= V
SS
and T
A
= 25°C unless otherwise specified. The V
IL
, V
IH
and I
IN
parameters are
referenced to V
SS
/COM and are applicable to the respective input leads: IN and DT. The V
O
, I
O
and Ron parameters are
referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol Definition Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage for HO & logic “0” for LO 2.9 V
CC
= 10V to 20V
V
IL
Logic “0” input voltage for HO & logic “1” for LO 0.8 V
CC
= 10V to 20V
V
SD,TH DT/SD pin shutdown input threshold
11.5 13 14.5
V
OH
High level output voltage, V
BIAS
- V
O
0.8 1.4 I
O
= 20 mA
V
OL
Low level output voltage, V
O
0.3 0.6 I
O
= 20 mA
I
LK
Offset supply leakage current 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 20 60 150 V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current 0.4 1.0 1.6 mA V
IN
= 0V or 5V
RDT = 0
I
IN+
Logic “1” input bias current 5 20 IN = 5V, SD = 0V
I
IN-
Logic “0” input bias current 1 2 IN = 0V, SD = 5V
V
CCUV+
V
CC
and V
BS
supply undervoltage positive going 8.0 8.9 9.8
V
BSUV+
threshold
V
CCUV-
V
CC
and V
BS
supply undervoltage negative going 7.4 8.2 9.0
V
BSUV-
threshold
V
CCUVH
Hysteresis 0.3 0.7
V
BSUVH
I
O+
Output high short circuit pulsed vurrent 120 200 V
O
= 0V, PW10 µs
I
O-
Output low short circuit pulsed current 250 350 V
O
=15V,PW10 µs
V
V
µA
µA
mA
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF, T
A
= 25°C, DT = VSS unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 750 950 V
S
= 0V
t
off
Turn-off propagation delay 200 280 V
S
= 0V or 600V
MT Delay matching, HS & LS turn-on/off 0 70
t
r
Turn-on rise time 150 220 V
S
= 0V
t
f
Turn-off fall time 50 80 V
S
= 0V
DT Deadtime: LO turn-off to HO turn-on(DT
LO-HO) &
400 540 680 RDT= 0
HO turn-off to LO turn-on (DT
HO-LO)
4 5 6 usec RDT = 200k
MDT Deadtime matching = DT
LO - HO
- DT
HO-LO
0 60 RDT=0
0 600 RDT = 200k
tsd Shut down propagation delay 215 615
nsec
nsec

IR21091SPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers HALF BRDG DRVR 600V 120mA 750ns
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet