STS4DNFS30L Electrical ratings
Doc ID 8566 Rev 5 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (v
gs
= 0) 30 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ)30V
V
GS
Gate- source voltage ±16 V
I
D
Drain current (continuous) at T
C
= 25°C 4 A
I
D
Drain current (continuous) at T
C
= 100°C 2.5 A
I
DM
(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 16 A
P
TOT
Total dissipation at T
C
= 25°C dual operation 2 W
Table 3. Schottky absolute maximum ratings
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse
voltage
30 V
I
F(RMS)
RMS forward current 20 A
I
F(AV)
Average forward current
TL=125°C
δ=0.5
3A
I
FSM
Surge non repetitive forward
current
tp = 10 ms
Sinusoidal
75 A
I
RRM
Repetitive peak reverse current
tp = 2 µs
F=1 kHz
1A
I
RSM
Non repetitive peak reverse
current
tp = 100 µs1A
dv/dt
Critical rate of rise of reverse
voltage
10000 V/µs
Table 4. Thermal data
Symbol Parameter Value Unit
R
thj-a
Thermal resistance junction-ambient
MOSFET
(1)
1. Mounted on FR-4 board (steady state).
62.5
°C/W
°C/W
T
J
Junction temperature -55 to 150 °C
T
stg
Storage temperature range -55 to 150 °C
Obsolete Product(s) - Obsolete Product(s)
