Table 12: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision E)
Values are for the MT41J512M8 DDR3 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
495 423 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
594 558 mA
Precharge power-down current: Slow exit I
DD2P0
162 162 mA
Precharge power-down current: Fast exit I
DD2P1
288 252 mA
Precharge quiet standby current I
DD2Q
288 252 mA
Precharge standby current I
DD2N
288 252 mA
Precharge standby ODT current I
DD2NT
351 315 mA
Active power-down current I
DD3P
342 315 mA
Active standby current I
DD3N
342 315 mA
Burst read operating current I
DD4R
1413 1260 mA
Burst write operating current I
DD4W
1125 990 mA
Refresh current I
DD5B
2115 2052 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
180 180 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
225 225 mA
All banks interleaved read current I
DD7
1980 1710 mA
Reset current I
DD8
180 180 mA
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 VLP UDIMM
I
DD
Specifications
PDF: 09005aef84a973e5
jdf9c256_512x72az.pdf - Rev. E 07/15 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Table 13: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision P)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8)
component data sheet
Parameter Symbol 1866 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
261 252 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
396 387 mA
Precharge power-down current: Slow exit I
DD2P0
99 90 mA
Precharge power-down current: Fast exit I
DD2P1
99 99 mA
Precharge quiet standby current I
DD2Q
135 135 mA
Precharge standby current I
DD2N
153 144 mA
Precharge standby ODT current I
DD2NT
198 180 mA
Active power-down current I
DD3P
135 135 mA
Active standby current I
DD3N
189 180 mA
Burst read operating current I
DD4R
918 810 mA
Burst write operating current I
DD4W
1017 909 mA
Refresh current I
DD5B
1368 1368 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
135 135 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
207 207 mA
All banks interleaved read current I
DD7
1314 1170 mA
Reset current I
DD8
117 117 mA
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 VLP UDIMM
I
DD
Specifications
PDF: 09005aef84a973e5
jdf9c256_512x72az.pdf - Rev. E 07/15 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Temperature Sensor with Serial Presence-Detect EEPROM
The temperature sensor continuously monitors the module's temperature and can be
read back at any time over the I
2
C bus shared with the SPD EEPROM. Refer to JEDEC
standard No. 21-C page 4.7-1, "Definition of the TSE2002av, Serial Presence Detect with
Temperature Sensor."
Serial Presence-Detect
For the latest SPD data, refer to Micron's SPD page: micron.com/SPD.
Table 14: Temperature Sensor with SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage V
DDSPD
3.0 3.6 V
Supply current: V
DD
= 3.3V I
DD
2.0 mA
Input high voltage: Logic 1; SCL, SDA V
IH
V
DDSPD
x 0.7 V
DDSPD
+ 1 V
Input low voltage: Logic 0; SCL, SDA V
IL
–0.5 V
DDSPD
x 0.3 V
Output low voltage: I
OUT
= 2.1mA V
OL
0.4 V
Input current I
IN
–5.0 5.0 µA
Temperature sensing range –40 125 °C
Temperature sensor accuracy (class B) –1.0 1.0 °C
Table 15: Temperature Sensor and SPD EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Time bus must be free before a new transition can
start
t
BUF 4.7 µs
SDA fall time
t
F 20 300 ns
SDA rise time
t
R 1000 ns
Data hold time
t
HD:DAT 200 900 ns
Start condition hold time
t
H:STA 4.0 µs
Clock HIGH period
t
HIGH 4.0 50 µs
Clock LOW period
t
LOW 4.7 µs
SCL clock frequency
t
SCL 10 100 kHz
Data setup time
t
SU:DAT 250 ns
Start condition setup time
t
SU:STA 4.7 µs
Stop condition setup time
t
SU:STO 4.0 µs
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 VLP UDIMM
Temperature Sensor with Serial Presence-Detect EEPROM
PDF: 09005aef84a973e5
jdf9c256_512x72az.pdf - Rev. E 07/15 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.

MT9JDF51272AZ-1G6E1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240UDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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