OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

KSB1121STF

P1-P3P4-P5
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSB1121 Rev. B1
KSB1121 PNP Epitaxial Planar Silicon Transistor
July 2005
KSB1121
PNP Epitaxial Planar Silicon Transistor
High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity
• Fast Switching Speed
• Complement to KSD1621
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
* Mounted on Ceramic Board (250mm
2
x 0.8mm)
Electrical Characteristics
T
a
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage -30 V
V
CEO
Collector-Emitter Voltage -25 V
V
EBO
Emitter-Base Voltage -6 V
I
C
Collector Current -2 A
P
C
P
C
*
Collector Power Dissipation 500
1.3
mW
W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -10µA, I
E
= 0 -30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -1mA, I
B
= 0 -25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10µA, I
C
= 0 -6 V
I
CBO
Collector Cut-off Current V
CB
= -20V, I
E
= 0 -100 nA
I
EBO
Emitter Cut-off Current V
BE
= -4V, I
C
= 0 -100 nA
h
FE1
h
FE2
DC Current Gain V
CE
= -2V, I
C
= -0.1A
V
CE
= -2V, I
C
= -1.5A
100
65
560
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -1.5A, I
B
= -75mA -0.35 -0.6 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -1.5A, I
B
= -75mA -0.85 -1.2 V
SOT-89
1
1. Base 2. Collector 3. Emitter
11 21
PY WW
h
FE
grage
Year co d e
Weekly code
Marking
2
www.fairchildsemi.com
KSB1121 Rev. B1
KSB1121 PNP Epitaxial Planar Silicon Transistor
Electrical Characteristics
(Continued)
T
a
= 25°C unless otherwise noted
h
FE
Classification
Package Marking and Ordering Information
Symbol Parameter Test Condition Min. Typ. Max. Units
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= -50mA 150 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
= 0, f = 1MHz 32 pF
t
ON
Turn On Time * V
CC
= -12V, V
BE
= -5V
I
B1
= -I
B2
= -25mA
I
C
= -500mA, R
L
= 24Ω
60 ns
t
STG
Storage Time * 350 ns
t
F
Fall time * 25 ns
Classification R S T U
h
FE1
100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560
Device Marking Device Package Reel Size Tape Width Quantity
1121 KSB1121 SOT-89 13” -- 4,000
3
www.fairchildsemi.com
KSB1121 Rev. B1
KSB1121 PNP Epitaxial Planar Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0.0 -0.2 -0.4 -0.6 -0.8 -1.0
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
I
B
= -100mA
I
B
= -2mA
I
B
= -50mA
I
B
= -10mA
I
B
= -200mA
I
B
= -30mA
I
B
= -8mA
I
B
= -6mA
I
B
= -4mA
I
B
= -20mA
I
B
= 0
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.01 -0.1 -1 -10
1
10
100
1000
V
CE
= -2V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
V
CE
= -2V
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
I
E
=0
f = 1MHz
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
-0.1 -1 -10
10
100
1000
V
CE
= -10V
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
I
C
[A], COLLECTOR CURRENT
P1-P3P4-P5

KSB1121STF

Mfr. #:
Buy KSB1121STF
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT PNP Epitaxial Planar Sil
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet