MT18KSF1G72AKIZ-1G6E1

DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB (x72, ECC, DR) 244-Pin 1.35V DDR3L Mini-UDIMM
DRAM Operating Conditions
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision E)
Values are for the MT41K512M8 DDR3L 1.35V SDRAM only and are computed from values specified in the 4Gb (512 Meg x
8) component data sheet.
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
657 585 558 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
1
756 720 693 mA
Precharge power-down current: Slow exit I
DD2P0
2
324 324 324 mA
Precharge power-down current: Fast exit I
DD2P1
2
576 504 468 mA
Precharge quiet standby current I
DD2Q
2
576 504 486 mA
Precharge standby current I
DD2N
2
576 522 504 mA
Precharge standby ODT current I
DD2NT
1
513 477 450 mA
Active power-down current I
DD3P
2
684 630 576 mA
Active standby current I
DD3N
2
684 630 576 mA
Burst read operating current I
DD4R
1
1575 1422 1269 mA
Burst write operating current I
DD4W
1
1287 1152 1017 mA
Refresh current I
DD5B
1
2277 2214 2178 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
360 360 360 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
450 450 450 mA
All banks interleaved read current I
DD7
1
2124 1854 1584 mA
RESET low current I
DD8
2
360 360 360 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
8GB (x72, ECC, DR) 244-Pin 1.35V DDR3L Mini-UDIMM
I
DD
Specifications
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Temperature Sensor with Serial Presence-Detect EEPROM
The temperature sensor continuously monitors the module's temperature and can be
read back at any time over the I
2
C bus shared with the SPD EEPROM. Refer to JEDEC
standard No. 21-C page 4.7-1, "Definition of the TSE2002av, Serial Presence Detect with
Temperature Sensor."
Serial Presence-Detect
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
Table 12: Temperature Sensor with SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage V
DDSPD
3.0 3.6 V
Supply current: V
DD
= 3.3V I
DD
2.0 mA
Input high voltage: Logic 1; SCL, SDA V
IH
V
DDSPD
x 0.7 V
DDSPD
+ 1 V
Input low voltage: Logic 0; SCL, SDA V
IL
–0.5 V
DDSPD
x 0.3 V
Output low voltage: I
OUT
= 2.1mA V
OL
0.4 V
Input current I
IN
–5.0 5.0 µA
Temperature sensing range –40 125 °C
Temperature sensor accuracy (class B) –1.0 1.0 °C
Table 13: Temperature Sensor and SPD EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Time bus must be free before a new transition can
start
t
BUF 4.7 µs
SDA fall time
t
F 20 300 ns
SDA rise time
t
R 1000 ns
Data hold time
t
HD:DAT 200 900 ns
Start condition hold time
t
H:STA 4.0 µs
Clock HIGH period
t
HIGH 4.0 50 µs
Clock LOW period
t
LOW 4.7 µs
SCL clock frequency
t
SCL 10 100 kHz
Data setup time
t
SU:DAT 250 ns
Start condition setup time
t
SU:STA 4.7 µs
Stop condition setup time
t
SU:STO 4.0 µs
8GB (x72, ECC, DR) 244-Pin 1.35V DDR3L Mini-UDIMM
Temperature Sensor with Serial Presence-Detect EEPROM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.

MT18KSF1G72AKIZ-1G6E1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3L SDRAM 8GB 244MUDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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