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LL43-GS08

P1-P3P4-P4
LL42, LL43
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 15-May-12
1
Document Number: 85672
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• For general purpose applications
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• These diodes are also available in the DO-35 case with
type designations BAT42 to BAT43 and in the SOD-123
case with type designations BAT42W-V to BAT43W-V
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION REMARKS
LL42 LL42-GS18 or LL42-GS08 Single diode Tape and reel
LL43 LL43-GS18 or LL43-GS08 Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
30 V
Forward continuous current
(1)
I
F
200 mA
Repetitive peak forward current
(1)
t
p
1 s, < 0.5 I
FRM
500 mA
Surge forward current
(1)
t
p
= 10 ms I
FSM
4A
Power dissipation
(1)
T
amb
= 65 °C P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
300 K/W
Junction temperature T
j
125 °C
Ambient operating temperature range T
amb
- 55 to + 125 °C
Storage temperature range T
stg
- 65 to + 150 °C
LL42, LL43
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 15-May-12
2
Document Number: 85672
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test t
p
< 300 μs, t
p
/T < 0.02
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 2 - Typical Reverse Characteristics
Fig. 3 - Typical Reverse Characteristics
Fig. 4 - Typical Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA (pulsed) V
(BR)
30 V
Leakage current
(1)
V
R
= 25 V I
R
0.5 μA
V
R
= 25 V, T
j
= 100 °C I
R
100 μA
Forward voltage
(1)
I
F
= 200 mA V
F
1000 mV
I
F
= 10 mA LL42 V
F
400 mV
I
F
= 50 mA LL42 V
F
650 mV
I
F
= 2 mA LL43 V
F
260 330 mV
I
F
= 15 mA LL43 V
F
450 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
7pF
Reverse recovery time I
F
= 10 mA, I
R
= 10 mA, i
R
= 1 mA, R
L
= 100 t
rr
5ns
Rectification efficieny R
L
= 15 k, C
L
= 300 pF, f = 45 MHz, V
RF
= 2 V
v
80 %
200
18442
T
amb
- Ambient Temperature (°C)
250
200
150
100
50
50 100 1500
0
P
tot
- Power Dissipation (mW)
18443
120010008006004002000
I- Forward Current (mA)
F
1000
100
10
1
0.1
0.01
V
F
- Instantaneous Forward Voltage (mV)
25 °C
125 °C
- 40 °C
1000
100
10
1
0.1
0.01
18444
0 1020304050
V
R
- Reverse Voltage (V)
125 °C
100 °C
75 °C
50 °C
25 °C
I - Reverse Leackage Current (µA)
R
18445
14
12
10
8
6
4
2
0
0102030
V
R
- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
51525
LL42, LL43
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 15-May-12
3
Document Number: 85672
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80
Cathode indification
0.47 (0.019) max.
2.5 (0.098) max.
1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
P1-P3P4-P4

LL43-GS08

Mfr. #:
Buy LL43-GS08
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 200mA 30 Volt 4.0 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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