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IXTP140N12T2

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA140N12T2
IXTP140N12T2
Fig. 7. Input Admittance
0
40
80
120
160
200
240
3.03.54.04.55.05.56.06.57.0
V
GS
- Volts
I
D
- Amperes
V
DS
= 10V
T
J
= 150
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
40
80
120
160
200
240
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
V
DS
= 10V
T
J
= - 40
o
C
25
o
C
150
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
100
200
300
400
500
600
700
800
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
SD
- Volts
I
S
- Amperes
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
2
4
6
8
10
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 60V
I
D
= 70A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
100μs
1ms
10ms
R
DS(on)
Limit
T
J
= 175
o
C
T
C
= 25
o
C
Single Pulse
DC
© 2017 IXYS CORPORATION, All Rights Reserved
IXTA140N12T2
IXTP140N12T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
16
20
24
28
32
36
40
60 100 140 180 220 260
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 60V
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
20
40
60
80
100
120
2345678910
R
G
- Ohms
t
r
- Nanoseconds
10
20
30
40
50
60
70
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 150
o
C, V
GS
= 10V
V
DS
= 60V
I
D
= 140A, 280A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
10
15
20
25
30
35
40
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f
- Nanoseconds
30
35
40
45
50
55
60
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 2, V
GS
= 10V
V
DS
= 60V
I
D
= 280A
I
D
= 140A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
12
14
16
18
20
22
24
60 80 100 120 140 160 180 200 220 240
I
D
- Amperes
t
f
- Nanoseconds
30
35
40
45
50
55
60
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 2, V
GS
= 10V
V
DS
= 60V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
16
20
24
28
32
36
40
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 60V
I
D
= 280A
I
D
= 140A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
20
40
60
80
100
120
140
2345678910
R
G
- Ohms
t
f
- Nanoseconds
20
40
60
80
100
120
140
160
t
d(off)
- Nanoseconds
I
D
= 140A
I
D
= 280A
t
r
t
d(on)
T
J
= 150
o
C, V
GS
= 10V
V
DS
= 60V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA140N12T2
IXTP140N12T2
IXYS REF: IXT_140N12T2 (V6-N12)5-02-17
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
P1-P3P4-P6

IXTP140N12T2

Mfr. #:
Buy IXTP140N12T2
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen2 TO-220AB/FP
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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