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IXDH20N120

P1-P3P4-P4
© 2004 IXYS All rights reserved
4 - 4
418
IXDH 20N120
IXDH 20N120 D1
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0 10203040
0
1
2
3
4
5
6
7
0
20
40
60
80
100
120
140
0 10203040
0
1
2
3
4
5
0
100
200
300
400
500
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
10
0 50 100 150 200 250 300 350
0
1
2
3
4
0
400
800
1200
1600
0 50 100 150 200 250 300 350
0
4
8
12
0
80
160
240
single pulse
V
CE
= 600V
V
GE
= ±15V
R
G
= 82Ω
T
J
= 125°C
IXDH20N120D1
V
CE
= 600V
V
GE
= ±15V
I
C
= 20A
T
J
= 125°C
0 200 400 600 800 1000 1200
0
5
10
15
20
25
30
35
40
R
G
= 82Ω
T
J
= 125°C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= ±15V
R
G
= 82Ω
T
J
= 125°C
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 20A
T
J
= 125°C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ
P1-P3P4-P4

IXDH20N120

Mfr. #:
Buy IXDH20N120
Manufacturer:
Littelfuse
Description:
IGBT Transistors 20 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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