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QW-BTR01
REV:E
Comchip Technology CO., LTD.
General Purpose Transistor
Unit
V
V
pF
nS
Max.
0.85
0.95
200
50
4.0
8.0
35
35
0.2
Min.
40
Symbol
tS
fT
Cobo
Cibo
td
tr
tf
Electrical Characteristics (at TA=25°C unless otherwise noted)
VCB=5.0V , IE=0 , f=1.0MHz
IC=10mA , IB1=1.0mA
Conditions
VCC=3.0V BE=-0.5V , V
VCC=3.0V ,
Note: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
SWITCHING CHARACTERISTICS
IC=10mA , IB1=IB2=1.0mA
ON CHARACTERISTICS (Note)
SMALL–SIGNAL CHARACTERISTICS
Input Capacitance
Characteristics
Fall Time
Storage Time
Output Capacitance
Delay Time
Rise Time
IC =1mA , (Note)
V(BR)CEO
Collector-Emitter Breakdown Voltage
V
V
nA
nA
50
50
IC =10μA
V(BR)CBO
60
Collector-Base Breakdown Voltage
IE =10μA
V(BR)EBO
6.0
Emitter-Base Breakdown Voltage
VCE=30V , VEB=3V
IBLBase Cut-off Current
VCE=30V V B=3V , E
ICEX
Collector Cut-off Current
OFF CHARACTERISTICS
IC=10mA IB=1.0mA ,
VCE(sat)
0.3
V
IC=50mA IB=5.0mA ,
IC=50mA IB=5mA ,
VBE(sat)
IC=10mA IB=1.0mA ,
0.65
DC Current Gain
VCE=1V IC=0.1mA ,
VCE=1V IC=1.0mA ,
VCE=1V IC=50mA ,
VCE=1V IC=10mA ,
VCE=1V IC=100mA ,
hFE
40
70
100
60
30
300
Collector-Emitter Saturation Voltage
(Note)
Base-Emitter Saturation Voltage
(Note)
nS
nS
nS
300
MHZ
pF
VCE=20V , IC=10mA f=100MHZ ,
Current - Gain - Bandwidth Product
Input Impedancen
Small - Signal Current Gain
Voltage Feedback Ratio
Output Admittance
Noise Figure
VBE=0.5V , IC=0 , f=1.0MHz
VCE=10V , IC=1.0mA , f=1.0kHz
VCE=10V , IC=1.0mA , f=1.0kHz
VCE=10V , IC=1.0mA , f=1.0kHz
VCE=10V , IC=1.0mA , f=1.0kHz
VCE=5V , IC=100μA , f=1.0kHz , RS=1.0kΩ
hie
hre
hfe
hoe
NF
10
8.0
400
40
1.0
0.5
100
1.0
5.0
kΩ
μmhos
X10
-4
dB
Company reserves the right to improve product design , functions and reliability without notice.
