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IRFHS8342TR2PBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 2
Features and Benefits
Applications
• Control MOSFET for Buck Converters
• System/Load Switch
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
Storage Temperature Range
V
W
A
°C
Max.
8.8
15
76
±20
30
7.1
19
8.5
-55 to + 150
2.1
0.02
1.3
2mm x 2mm PQFN
G
D
D
S
D
D
S
G
3
S
D2
D1
4S
5D
6D
TOP VIEW
D
D
V
DS
30 V
V
GS
max
±
20 V
R
DS(on) max
(@V
GS
= 10V)
16.0
m
Ω
Q
g(typical)
(@V
GS
= 4.5V)
4.2 nC
I
D
(@T
c(Bottom)
= 25°C)
8.5 A
IRFHS8342PbF
Form Quantity
IRFHS8342TRPbF PQFN 2mm x 2mm Tape and Reel 4000
IRFHS8342TR2PbF
PQFN 2mm x 2mm Tape and Reel 400 EOL notice # 259
Orderable part number Package Type
Standard Pack
Note
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
Features Resulting Benefits
Low R
DSon
(≤ 16.0mΩ) Lower Conduction Losses
Low Thermal Resistance to PCB (
≤
13°C/W) Enable better thermal dissipation
Low Profile (
≤
1.0 mm) results in Increased Power Density
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
IRFHS8342PbF
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
R
θ
is measured at T
J
of approximately 90°C.
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
–––
13
R
θ
JC
(Top)
Junction-to-Case
–––
90
°C/W
R
θ
JA
Junction-to-Ambient
–––
60
R
θ
JA
Junction-to-Ambient (<10s)
–––
42
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
R
DS(on )
Static Drain-to-Source On-Resistance ––– 13 16
––– 20 25
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 18 ––– ––– S
Q
g
Total Gate Charge ––– 4.2 ––– nC
Q
g
Total Gate Charge ––– 8.7 ––– V
DS
= 15V
Q
gs
Gate-to-Source Charge ––– 1.5 –––
Q
gd
Gate-to-Drain Charge ––– 1.3 –––
Q
oss
Output Charge ––– 3.0 ––– nC
R
G
Gate Resistance ––– 1.9
–––
Ω
t
d(on)
Turn-On Delay Time ––– 5.9 –––
t
r
Rise Time –––15–––
t
d(off)
Turn-Off Delay Time ––– 5.2 –––
t
f
Fall Time ––– 5.0 –––
C
iss
Input Capacitance ––– 600 –––
C
oss
Output Capacitance ––– 100 –––
C
rss
Reverse Transfer Capacitance ––– 46 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 11 17 ns
Q
rr
Reverse Recovery Charge ––– 13 20 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
GS
= 10V
V
GS
= 20V
V
GS
= -20V
––– ––– 76
––– ––– 8.5
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.5A
Conditions
See Fig.17
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 8.5A , V
DD
= 15V
di/dt = 330A/μs
T
J
= 25°C, I
S
= 8.5A , V
GS
= 0V
showing the
integral reverse
p-n junction diode.
R
G
=1.8Ω
V
DS
= 10V, I
D
= 8.5A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 8.5A (See Fig. 6 & 16)
I
D
= 8.5A
V
GS
= 0V
V
DS
= 25V
V
DS
= 24V, V
GS
= 0V
V
DS
= V
GS
, I
D
= 25μA
V
GS
= 4.5V, I
D
= 6.8A
m
Ω
V
DD
= 15V, V
GS
= 4.5V
V
GS
= 4.5V, V
DS
= 15V, I
D
= 8.5A
V
DS
= 16V, V
GS
= 0V
IRFHS8342PbF
3 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
7.0V
5.0V
4.5V
3.5V
3.3V
2.8V
BOTTOM 2.5V
≤
60μs PULSE WIDTH
Tj = 150°C
2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
7.0V
5.0V
4.5V
3.5V
3.3V
2.8V
BOTTOM 2.5V
≤
60μs PULSE WIDTH
Tj = 25°C
2.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 8.5A
V
GS
= 10V
2.0 3.0 4.0 5.0 6.0
V
GS
, Gate-to-Source Voltage (V)
1.0
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
≤
60μs PULSE WIDTH
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
024681012
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
V
DS
= 6.0V
I
D
= 8.5A
P1-P3P4-P6P7-P9

IRFHS8342TR2PBF

Mfr. #:
Buy IRFHS8342TR2PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 30V 8.5A 16mOhm 4.2 Qg
Lifecycle:
New from this manufacturer.
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