VS-SD400N/R Series
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Vishay Semiconductors
Revision: 25-Nov-13
4
Document Number: 93548
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Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
30 50 70 90 110 130 150 170 190
Maximum Allowable Ambient Temperature (°C)
0
100
200
300
400
500
600
700
800
0 100 200 300 400 500 600 700
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD400N/R Series
T = 190°C
J
R
thSA
= 0.04 K/W - ΔR
1.8 K/W
1
K/W
0.6 K/W
0.4 K/W
0.2 K/W
0.3 K/W
0.1 K/W
2000
3000
4000
5000
6000
7000
8000
110100
Numb e r Of Eq ua l Amp litud e Ha lf Cyc le Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
SD 4 0 0 N / R Se r i e s
Init ia l T = 190°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
1000
2000
3000
4000
5000
6000
7000
8000
9000
0.01 0.1 1
Pulse Tra in Dura t io n (s)
Peak Ha lf Sine Wave Forward Current (A)
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
Init ia l T = 190°C
No Volta ge Rea p p lied
Rated V Reapplied
RRM
J
SD 4 0 0 N / R Se r i e s
100
1000
10000
0.5 1 1.5 2 2.5
T = 2 5 ° C
J
In st a n t a n e o u s Fo rw a r d V o l t a g e ( V )
Instantaneous Forward Current (A)
SD 4 0 0 N / R Se r i e s
T = 1 9 0 ° C
J
