MPSW01ARLRPG Datasheet MPSW01ARLRPG, MPSW01A, MPSW01G | P1-P3

August, 2010 − Rev. 6

1 Publication Order Number:

MPSW01/D

MPSW01, MPSW01A

One Watt High Current

Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MPSW01

MPSW01A

V

CEO

30

40

Vdc

Collector−Base Voltage

MPSW01

MPSW01A

V

CBO

40

50

Vdc

Emitter−Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

1000 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

1.0

8.0

W

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

2.5

20

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

125 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

50 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

COLLECTOR

3

2

BASE

1

EMITTER

MARKING DIAGRAM

MPS

W01x

AYWW G

G

x = 01A Devices

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92 1 WATT

(TO−226)

CASE 29−10

STYLE 1

MPSW01, MPSW01A

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1) (I

C

= 10 mAdc, I

B

= 0)

MPSW01

MPSW01A

V

(BR)CEO

30

40

−

Vdc

Collector−Base Breakdown Voltage (I

C

= 100 mAdc, I

E

= 0)

MPSW01

MPSW01A

V

(BR)CBO

40

50

−

Vdc

Emitter−Base Breakdown Voltage (I

E

= 100 mAdc, I

C

= 0)

V

(BR)EBO

5.0 − Vdc

Collector Cutoff Current

(V

CB

= 30 Vdc, I

E

= 0) MPSW01

(V

CB

= 40 Vdc, I

E

= 0) MPSW01A

I

CBO

−

0.1

mAdc

Emitter Cutoff Current (V

EB

= 3.0 Vdc, I

C

= 0) I

EBO

− 0.1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= 10 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 100 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 1000 mAdc, V

CE

= 1.0 Vdc)

h

FE

55

60

50

−

Collector−Emitter Saturation Voltage (I

C

= 1000 mAdc, I

B

= 100 mAdc) V

CE(sat)

− 0.5 Vdc

Base−Emitter On Voltage (I

C

= 1000 mAdc, V

CE

= 1.0 Vdc) V

BE(on)

− 1.2 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product (I

C

= 50 mAdc, V

CE

= 10 Vdc, f = 20 MHz) f

T

50 − MHz

Output Capacitance (V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz) C

obo

− 20 pF

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device Package Shipping

†

MPSW01 TO−92 5000 Units / Bulk

MPSW01G TO−92

(Pb−Free)

5000 Units / Bulk

MPSW01AG TO−92

(Pb−Free)

5000 Units / Bulk

MPSW01ARLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

MPSW01ARLRPG TO−92

(Pb−Free)

2000 / Tape & Ammo Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Figure 1. DC Current Gain Figure 2. Collector Saturation Region

50 50010

I

C

, COLLECTOR CURRENT (mA)

300

200

70

50

30

I

B

, BASE CURRENT (mA)

1.0

0.8

0.6

0.4

0

V

CE

= 1.0 V

T

J

= 25°C

h

20

100 0.05 100.01

0.02

0.1 0.2

, COLLECTOR VOLTAGE (VOLTS)

200 1000

100

20 50 100

0.2

V

CE

, CURRENT GAIN

FE

0.5 1.0 2.0 5.0

T

J

= 25°C

I

C

=

1000 mA

I

C

=

500 mA

I

C

=

10 mA

I

C

=

50 mA

I

C

=

100 mA

I

C

=

250 mA

MPSW01, MPSW01A

http://onsemi.com

3

Figure 3. “ON” Voltages Figure 4. Temperature Coefficient

I

C

, COLLECTOR CURRENT (mA)

1.0

0.8

0

I

C

, COLLECTOR CURRENT (mA)

1.0

-1.2

-1.6

-2.0

-2.4

-2.8

2.0

V, VOLTAGE (VOLTS)

q

0.2

0.6

0.4

-0.8

5.0 10 20 50 100 200

500 1000

qV

B

FOR V

BE

T

J

= 25°C

1.0 2.0 5.0 10 20 50 100 200 500 1000

V

BE(sat)

@ I

C

/I

B

= 10

V

CE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= 1.0 V

, TEMPERATURE COEFFICIENT (mV/ C)°

VB

Figure 5. Current Gain — Bandwidth Product

Figure 6. Capacitance

Figure 7. Active Region — Safe Operating Area

5010

I

C

, COLLECTOR CURRENT (mA)

300

200

70

50

30

V

R

, REVERSE VOLTAGE (VOLTS)

80

60

40

0

1.0

V

CE

, COLLECTOR-EMITTER VOLTAGE (V)

500

100

50

T

J

= 25°C

f

, COLLECTOR CURRENT (mA)

20

100 10C

obo

5.0

C, CAPACITANCE (pF)

200 1000

100

2015 25

20

10

20

200

1 k

5.02.0 10 20

30 40

I

C

, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

T

2.0C

ibo

1.0 4.03.0 5.0

T

A

= 25°C

T

C

= 25°C

V

CE

= 10 V

T

J

= 25°C

f = 20 MHz

C

ibo

C

obo

DUTY CYCLE ≤ 10%

MPSW01

MPSW01A

100 ms

1.0 s

1.0 ms

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

MPSW01ARLRPG

MPSW01ARLRPG

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