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FPN560A_D26Z

P1-P3P4-P4
NPN Low Saturation Transistor
FPN560
FPN560A
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NA.
Symbol Characteristic Max Units
FPN560 / FPN560A
P
D
Total Device Dissipation 1.0 W
R
θ
JC
Thermal Resistance, Junction to Case 50
°C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 125
°C/W
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 60 V
V
CBO
Collector-Base Voltage 80 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 3.0 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
TO-226
C
B
E
1999 Fairchild Semiconductor Corporation
FPN560 / FPN560A
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
BV
CEO
Collector-Emitter Breakdown
Voltage
I
C
= 10 mA, I
B
= 0 60 V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
80 V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 100
µ
A, I
C
= 0
5.0 V
I
CBO
Collector Cutoff Current V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 100
°
C
100
10
nA
µ
A
I
EBO
Emitter Cutoff Current V
EB
= 4.0 V, I
C
= 0 100 nA
ON CHARACTERISTICS*
h
FE
DC Current Gain I
C
= 100 mA, V
CE
= 2.0 V
I
C
= 500 mA, V
CE
= 2.0 V
560
560A
I
C
= 1.0 A, V
CE
= 2.0 V
I
C
= 2.0 A, V
CE
= 2.0 V
70
100
250
80
40
300
550
V
CE(
sat
)
Collector-Emitter Saturation Voltage I
C
= 1.0 A, I
B
= 100 mA
I
C
= 2.0 A, I
B
= 200 mA
560
560A
300
350
300
mV
mV
mV
V
BE(
sat
)
Base-Emitter Saturation Voltage I
C
= 1.0 A, I
B
= 100 mA 1.25 V
V
BE(
on
)
Base-Emitter Saturation Voltage I
C
= 1.0 A, V
CE
= 2.0 V 1.0 V
SMALL SIGNAL CHARACTERISTICS
C
obo
Output Capacitance V
CB
= 10 V, I
E
= 0, f = 1.0 MHz 30 pF
F
T
Transition Frequency I
C
= 100 mA, V
CE
= 5.0 V,
f = 100 MHz
75 MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FPN560 / FPN560A
NPN Low Saturation Transistor
(continued)
Typical Characteristics
Base-Emitter Saturation
Voltage vs Collector Current
0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V -BASE-EMITTER SATURATION VOLTAGE(V)
C
BESAT
25 °C
- 40 °C
125 °C
β = 10
Base-Emitter On Voltage vs.
Collector Current
0.0001 0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
25 °C
- 40 °C
125 °C
V = 2.0V
ce
Input/Output Capacitance vs.
Reverse Bias Voltage
0.1 0.2 0.5 1 2 5 10 20 50 100
0
50
100
150
200
250
300
350
400
450
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pf)
CE
f = 1.0 MHz
C
ibo
C
obo
Current Gain vs. Collector Current
0.0001 0.001 0.01 0.1 1 2 5
0
100
200
300
400
500
I - COLLECTOR CURRENT (A)
H - CURRENT GAIN
C
FE
25°C
125°C
- 40°C
V = 2.0V
ce
Collector-Emitter Saturation
Voltage vs Collector Current
0.001 0.01 0.1 1 10
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (A)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
CESAT
- 40°C
25°C
125°C
β = 10
Power Dissipation vs
Ambient Tempe rat ure
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TE MPE RATUR E ( C)
P - POWER DISSIPATION (W)
°
D
TO-226
FPN560 / FPN560A
NPN Low Saturation Transistor
(continued)
P1-P3P4-P4

FPN560A_D26Z

Mfr. #:
Buy FPN560A_D26Z
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 60V 3A TO-226
Lifecycle:
New from this manufacturer.
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