TLHK4400L
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 06-Jun-14
1
Document Number: 84180
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Intensity LED in Ø 3 mm Tinted Diffused Package
DESCRIPTION
This device has been designed to meet the increasing
demand for AlInGaP technology general indicating and
lighting purposes.
It is housed in a 3 mm diffused plastic package. The wide
viewing angle of these devices provides a high brightness
across a large field of view.
All packing units are categorized in luminous intensity
groups. That allows users to assemble LEDs with uniform
appearance.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
•Package: 3 mm
• Product series: standard
• Angle of half intensity: ± 30°
FEATURES
• AlInGaP technology
• Standard Ø 3 mm (T-1) package
• Small mechanical tolerances
• Suitable for DC and high peak current
• Wide viewing angle
• Very high intensity
• Luminous intensity categorized
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Status lights
• Off/on indicator
• Background illumination
• Readout lights
• Maintenance lights
•Legend light
Note
• Driving the LED in reverse direction is suitable for a short term application
PARTS TABLE
PART COLOR
LUMINOUS INTENSITY
(mcd)
at I
F
(mA)
WAVELENGTH
(nm)
at I
F
(mA)
FORWARD VOLTAGE
(V)
at I
F
(mA)
TECHNOLOGY
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
TLHK4400L Red 16 70 - 10 626 630 639 10 - 1.9 2.6 20 AlInGaP on GaAs
TLHK4400L-PSZ Red 16 70 - 10 626 630 639 10 - 1.9 2.6 20 AlInGaP on GaAs
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
TLHK4400L
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage
(1)
V
R
5V
DC forward current T
amb
60 °C I
F
30 mA
Surge forward current t
p
10 μs I
FSM
0.1 A
Power dissipation P
V
80 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-55 to +100 °C
Soldering temperature t 5 s, 2 mm from body T
sd
260 °C
Thermal resistance junction/ambient R
thJA
400 K/W