74AUP1G04_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 18 November 2013 6 of 16
NXP Semiconductors
74AUP1G04-Q100
Low-power inverter
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
--0.9A
I
CC
additional supply current V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
=3.3V
--50A
T
amb
= 40 C to +125 C
V
IH
HIGH-level input voltage V
CC
= 0.8 V 0.75 V
CC
-- V
V
CC
= 0.9 V to 1.95 V 0.70 V
CC
-- V
V
CC
= 2.3 V to 2.7 V 1.6 - - V
V
CC
= 3.0 V to 3.6 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 0.8 V - - 0.25 V
CC
V
V
CC
= 0.9 V to 1.95 V - - 0.30 V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 V
V
CC
= 3.0 V to 3.6 V - - 0.9 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 0.8 V to 3.6 V V
CC
0.11 - - V
I
O
= 1.1 mA; V
CC
= 1.1 V 0.6 V
CC
-- V
I
O
= 1.7 mA; V
CC
= 1.4 V 0.93 - - V
I
O
= 1.9 mA; V
CC
= 1.65 V 1.17 - - V
I
O
= 2.3 mA; V
CC
= 2.3 V 1.77 - - V
I
O
= 3.1 mA; V
CC
= 2.3 V 1.67 - - V
I
O
= 2.7 mA; V
CC
= 3.0 V 2.40 - - V
I
O
= 4.0 mA; V
CC
= 3.0 V 2.30 - - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 0.8 V to 3.6 V - - 0.11 V
I
O
= 1.1 mA; V
CC
= 1.1 V - - 0.33 V
CC
V
I
O
= 1.7 mA; V
CC
= 1.4 V - - 0.41 V
I
O
= 1.9 mA; V
CC
= 1.65 V - - 0.39 V
I
O
= 2.3 mA; V
CC
= 2.3 V - - 0.36 V
I
O
= 3.1 mA; V
CC
= 2.3 V - - 0.50 V
I
O
= 2.7 mA; V
CC
= 3.0 V - - 0.36 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.50 V
I
I
input leakage current V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V - - 0.75 A
I
OFF
power-off leakage current V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V - - 0.75 A
I
OFF
additional power-off
leakage current
V
I
or V
O
= 0 V to 3.6 V;
V
CC
=0Vto0.2V
--0.75 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
--1.4A
I
CC
additional supply current V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
=3.3V
--75A
Table 7. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
74AUP1G04_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 18 November 2013 7 of 16
NXP Semiconductors
74AUP1G04-Q100
Low-power inverter
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 6
Symbol Parameter Conditions Min Typ
[1]
Max Unit
T
amb
= 25 C; C
L
= 5 pF
t
pd
propagation delay A to Y; see Figure 5
[2]
V
CC
= 0.8 V - 16.0 - ns
V
CC
= 1.1 V to 1.3 V 2.4 5.0 10.3 ns
V
CC
= 1.4 V to 1.6 V 1.8 3.6 6.4 ns
V
CC
= 1.65 V to 1.95 V 1.5 2.9 5.0 ns
V
CC
= 2.3 V to 2.7 V 1.2 2.4 3.9 ns
V
CC
= 3.0 V to 3.6 V 1.1 2.1 3.2 ns
T
amb
= 25 C; C
L
= 10 pF
t
pd
propagation delay A to Y; see Figure 5
[2]
V
CC
= 0.8 V - 19.8 - ns
V
CC
= 1.1 V to 1.3 V 2.8 5.9 12.2 ns
V
CC
= 1.4 V to 1.6 V 2.3 4.2 7.5 ns
V
CC
= 1.65 V to 1.95 V 2.0 3.5 5.9 ns
V
CC
= 2.3 V to 2.7 V 1.7 2.9 4.6 ns
V
CC
= 3.0 V to 3.6 V 1.6 2.7 3.8 ns
T
amb
= 25 C; C
L
= 15 pF
t
pd
propagation delay A to Y; see Figure 5
[2]
V
CC
= 0.8 V - 23.3 - ns
V
CC
= 1.1 V to 1.3 V 3.2 6.7 13.0 ns
V
CC
= 1.4 V to 1.6 V 2.6 4.7 8.6 ns
V
CC
= 1.65 V to 1.95 V 2.3 4.0 6.7 ns
V
CC
= 2.3 V to 2.7 V 2.1 3.3 5.1 ns
V
CC
= 3.0 V to 3.6 V 2.0 3.1 4.2 ns
T
amb
= 25 C; C
L
= 30 pF
t
pd
propagation delay A to Y; see Figure 5
[2]
V
CC
= 0.8 V - 33.6 - ns
V
CC
= 1.1 V to 1.3 V 4.4 8.9 16.0 ns
V
CC
= 1.4 V to 1.6 V 3.6 6.3 10.8 ns
V
CC
= 1.65 V to 1.95 V 3.2 5.3 9.0 ns
V
CC
= 2.3 V to 2.7 V 2.9 4.5 6.5 ns
V
CC
= 3.0 V to 3.6 V 2.9 4.2 5.4 ns
74AUP1G04_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 18 November 2013 8 of 16
NXP Semiconductors
74AUP1G04-Q100
Low-power inverter
[1] All typical values are measured at nominal V
CC
.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
T
amb
= 25 C
C
PD
power dissipation capacitance f = 1 MHz; V
I
= GND to V
CC
[3]
V
CC
= 0.8 V - 2.5 - pF
V
CC
= 1.1 V to 1.3 V - 2.7 - pF
V
CC
= 1.4 V to 1.6 V - 2.8 - pF
V
CC
= 1.65 V to 1.95 V - 3.0 - pF
V
CC
= 2.3 V to 2.7 V - 3.5 - pF
V
CC
= 3.0 V to 3.6 V - 4.0 - pF
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 6
Symbol Parameter Conditions Min Typ
[1]
Max Unit
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 6
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Max Min Max
C
L
= 5 pF
t
pd
propagation delay A to Y; see Figure 5
[1]
V
CC
= 1.1 V to 1.3 V 2.1 11.4 2.1 12.6 ns
V
CC
= 1.4 V to 1.6 V 1.6 7.4 1.6 8.2 ns
V
CC
= 1.65 V to 1.95 V 1.4 5.9 1.4 6.5 ns
V
CC
= 2.3 V to 2.7 V 1.1 4.5 1.1 5.0 ns
V
CC
= 3.0 V to 3.6 V 1.0 3.9 1.0 4.3 ns
C
L
= 10 pF
t
pd
propagation delay A to Y; see Figure 5
[1]
V
CC
= 1.1 V to 1.3 V 2.6 13.7 2.6 15.1 ns
V
CC
= 1.4 V to 1.6 V 2.1 8.7 2.1 9.6 ns
V
CC
= 1.65 V to 1.95 V 1.8 7.0 1.8 7.7 ns
V
CC
= 2.3 V to 2.7 V 1.5 5.4 1.5 6.0 ns
V
CC
= 3.0 V to 3.6 V 1.4 4.5 1.4 5.0 ns

74AUP1G04GV-Q100H

Mfr. #:
Manufacturer:
Nexperia
Description:
Inverters Low-power inverter
Lifecycle:
New from this manufacturer.
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