RJK03M1DPA Preliminary
R07DS0765EJ0200 Rev.2.00 Page 2 of 6
Feb 08, 2013
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30 — — V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
— — ± 0.5 A V
GS
= ±20 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — 1 A V
DS
= 24 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.2 — 2.5 V V
DS
= 10 V,
I
D
= 1 mA
R
DS(on)
— 1.9 2.3 m I
D
= 25 A, V
GS
= 10 V
Note4
Static drain to source on state
resistance
R
DS(on)
— 2.4 3.1 m I
D
= 25 A, V
GS
= 4.5 V
Note4
Forward transfer admittance |y
fs
| — 130 — S I
D
= 25 A, V
DS
= 5 V
Note4
Input capacitance Ciss — 3370 4720 pF
Output capacitance Coss — 560 — pF
Reverse transfer capacitance Crss — 315 — pF
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Gate Resistance
Rg — 1.5 3.0
Total gate charge
Qg — 25.0 — nC
Gate to source charge Qgs — 9.2 — nC
Gate to drain charge Qgd — 7.1 — nC
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 50 A
Turn-on delay time t
d(on)
— 6.1 — ns
Rise time
t
r
— 4.4 — ns
Turn-off delay time t
d(off)
— 57.5 — ns
Fall time t
f
— 18.4 — ns
V
GS
= 10 V, I
D
= 25 A
V
DD
10 V
R
L
= 0.4
Rg = 4.7
Body–drain diode forward voltage V
DF
— 0.81 1.05 V I
F
= 50 A, V
GS
= 0
Note4
Body–drain diode reverse recovery
time
t
rr
— 9.8 — ns
I
F
=50 A, V
GS
= 0
di
F
/ dt = 500 A/ s
Notes: 4. Pulse test
