OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NJT4030PT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 5
1 Publication Order Number:
NJT4030P/D
NJT4030P, NJV4030P
Bipolar Power Transistors
PNP Silicon
Features
• Epoxy Meets UL 94, V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CB
40 Vdc
Emitter−Base Voltage V
EB
6.0 Vdc
Base Current − Continuous I
B
1.0 Adc
Collector Current − Continuous I
C
3.0 Adc
Collector Current − Peak I
CM
5.0 Adc
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Power Dissipation
Total P
D
@ T
A
= 25°C (Note 1)
Total P
D
@ T
A
= 25°C (Note 2)
P
D
2.0
0.80
W
Thermal Resistance, Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
R
q
JA
R
q
JA
64
155
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
T
L
260 °C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.
2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.
SOT−223
CASE 318E
STYLE 1
MARKING
DIAGRAM
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
http://onsemi.com
1
4030PG
AYW
A = Assembly Location
Y Year
W = Work Week
4030P = Specific Device Code
G = Pb−Free Package
COLLECTOR 2,4
BASE
1
EMITTER 3
Device Package Shipping
†
ORDERING INFORMATION
NJT4030PT1G
SOT−223
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1000 / Tape &
Reel
NJT4030PT3G SOT−223
(Pb−Free)
4000 / Tape &
Reel
NJV4030PT1G
NJV4030PT3G
1
2
3
4
NJT4030P, NJV4030P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 10 mAdc, I
B
= 0 Adc)
V
CEO(sus)
40 − −
Vdc
Emitter−Base Voltage
(I
E
= 50 mAdc, I
C
= 0 Adc)
V
EBO
6.0 − −
Vdc
Collector Cutoff Current
(V
CB
= 40 Vdc)
I
CBO
− − 100
nAdc
Emitter Cutoff Current
(V
BE
= 6.0 Vdc)
I
EBO
− − 100
nAdc
ON CHARACTERISTICS (Note 3)
Collector−Emitter Saturation Voltage
(I
C
= 0.5 Adc, I
B
= 5.0 mAdc)
(I
C
= 1.0 Adc, I
B
= 10 mAdc)
(I
C
= 3.0 Adc, I
B
= 0.3 Adc)
V
CE(sat)
−
−
−
−
−
−
0.150
0.200
0.500
Vdc
Base−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
V
BE(sat)
− − 1.0
Vdc
Base−Emitter On Voltage
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
− − 1.0
Vdc
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 1.0 Vdc)
h
FE
220
200
100
−
−
−
−
400
−
−
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, f = 1.0 MHz)
C
ob
− 40 −
pF
Input Capacitance
(V
EB
= 5.0 Vdc, f = 1.0 MHz)
C
ib
− 130 −
pF
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 500 mA, V
CE
= 10 V, F
test
= 1.0 MHz)
f
T
− 160 −
MHz
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. f
T
= |h
FE
| • f
test
Figure 1. Power Derating
T
J
, TEMPERATURE (°C)
150100755025
0
0.5
1.0
1.5
2.0
2.5
P
D
, POWER DISSIPATION (W)
T
C
125
T
A
NJT4030P, NJV4030P
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 2. DC Current Gain Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
0
100
200
300
400
500
600
1010.10.010.001
0
100
200
300
500
600
700
Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
0.001
0.01
0.1
1
1010.10.010.001
0.01
0.1
1
Figure 6. Collector Saturation Region Figure 7. V
BE(on)
Voltage
I
B
, BASE CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1.0E−031.0E−04
0.01
0.1
1
1010.10.010.001
0
0.1
0.2
0.3
0.4
0.5
0.6
1.2
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, EMITTER−BASE VOLTAGE (V)
V
CE
= 1 V
150°C
−40°C
25°C
V
CE
= 4 V
150°C
−40°C
25°C
400
I
C
/I
B
= 10
150°C
−40°C
25°C
I
C
/I
B
= 50
150°C
−40°C
25°C
1.0E−02 1.0E−01 1.0E+00
0.7
0.8
0.9
1.0
1.1
V
CE
= 2 V
150°C
−40°C
25°C
I
C
= 2 A
0.1 A
1 A
0.5 A
P1-P3P4-P5

NJT4030PT3G

Mfr. #:
Buy NJT4030PT3G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 40V 3A PNP BIPOLAR POWER TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet