Electrical Characteristics Ta = 25C 3C
Static Characteristics
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Pulse test
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page
VDD = -25 V, VGS = -10 V to 0 V
S
pF
ns
ns
2 700
1.
2.
tf
MTM981400BBF
MOS FET
Product Standards
70
190
Fall Time
*1,*2
ID = -3.5 A
ID = -3.5 A
Turn-off Delay Time
*1,*2
td(off)
230
Turn-on Delay Time
*1,*2
td(on)
18 VDD = -25 V, VGS = 0 V to -10 V
Rise Time
*1,*2
tr
15
Reverse Transfer Capacitance Crss
175
VDS = -10 V, VGS = 0 V, f = 1 MH
Output Capacitance Coss
CissInput Capacitance
Forward transfer admittance
*1
10
ID = -7.0 A, VDS = -10 V
|Yfs|
m
ID = -3.5 A, VGS = -4.5 V 28 45
-2.5 V
Drain-source On-state Resistance
*1
ID = -7.0 A, VGS = -10 V
RDS(on)1
RDS(on)2
19 25
Gate-source threshold Voltage Vth
ID = -1.0 mA, VDS = -10.0 V -1
-10
A
Gate-source Leakage Current IGSS
VGS =
16 V, VDS = 0 V 10
A
Zero Gate Voltage Drain Current IDSS
VDS = -40 V, VGS = 0 V
Typ Max Unit
Drain-source Breakdown Voltage VDSS
ID = -1 mA, VGS = 0 V -40 V
Parameter Symbol Conditions
Min
2of6
