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BGF119E6329XTSA1

P1-P3P4-P6P7-P7
Data Sheet 4 V3.0, 2008-11-18
BGF119
Transient Voltage Suppressor
Transient Voltage Suppressor
Description
The BGF119 is a single line TVS diode designed for transient voltage and power overstress suppression. All pins
are protected against ESD pulses of 15kV contact discharge according to IEC61000-4-2. The wafer level package
is a green package with a size of only 0.75
mm x 0.75 mm and a total height of 0.60 mm.
Features
• 1 channel TVS diode designed for portable application
• ESD protection according to IEC61000-4-2
for +/-15 kV contact discharge on all IOs
• Wafer Level Package with SnAgCu solder balls
• RoHS and WEEE compliant package
• Very small form factor
TVS
• High peak pulse power
• Stand-off voltage up to 8 V
• Low clamping voltage factor Vcl/Vbr
• Fast response time
Type Package Marking Chip
BGF119 WLP-4-1 BGF119 N0742
WLP-4-1-3D
BGF119
Transient Voltage Suppressor
Data Sheet 5 V3.0, 2008-11-18
Figure 1 Schematic
Table 1 Maximum Ratings
Parameter Symbol Values Unit Note /
Test
Condition
Min. Typ. Max.
Voltage at all pins to GND V
P
0 8 V
Operating temperature range T
OP
-30 +85 °C
Storage temperature range T
STG
-55 +150 °C
Electrostatic discharge according to IEC61000-
4-2
1)
at all pins
1) Contact discharge
V
ESD
-15 15 kV
Table 2 Electrical Characteristics
1)
1) Otherwise specified at T
A
= 25 °C
Parameter Symbol Values Unit Note /
Test
Condition
Min. Typ. Max.
Line capacitance to GND C
T
230 pF V
R
= 0 V
Forward voltage V
F
2)
2) To avoid high temperature and possible disassembling of component from the board, DC current operation to be limited to
few seconds
1.1 V I
F
= 850 mA
Break down voltage V
BR
10
10
11
12
12
V I
R
= 15 mA
T
A
= -30°C
T
A
= 25°C
T
A
= 85°C
Clamping voltage during transient V
CL
3)
3) 8/20 µs pulse waveform according to IEC61000-4-5
13 V I
R
= 1 A
Leakage current of line to GND I
R
1
10
100
800
nA V
R
= 8 V
T
A
= -30°C
T
A
= 25°C
T
A
= 85°C
B1 (GND)
A1 A2
B2 (GND)
Data Sheet 6 V3.0, 2008-11-18
BGF119
Transient Voltage Suppressor
Figure 2 Line capacitance versus reverse voltage (typical values) at 25°C
Figure 3 Peak pulse reverse current (IEC61000-4-5) versus clamping voltage (typical values) at 25°C
Line Capacitance BGF119
0
50
100
150
200
250
300
0123456
Voltage [V]
Line Capacitance [pF]
BGF119 Peak pulse current vs clamping voltage
0,1
1,0
10,0
100,0
10 12 14 16 18 20
Clamping Voltage V
CL
[V]
Reverse Current I
R
[A]
P1-P3P4-P6P7-P7

BGF119E6329XTSA1

Mfr. #:
Buy BGF119E6329XTSA1
Manufacturer:
Infineon Technologies
Description:
TVS DIODE 8V 13V WLP-4
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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