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NSVBAT54SWT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 11
Publication Order Number:
BAT54SWT1/D
1
BAT54SWT1G,
NSVBAT54SWT1G
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 Volts (Typ) @ I
F
= 10 mAdc
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
200
1.6
mW
mW/°C
Forward Current (DC) I
F
200 Max mA
Non−Repetitive Peak Forward Current
t
p
< 10 msec
I
FSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
I
FRM
300
mA
Junction Temperature T
J
−55 to 125 °C
Storage Temperature Range T
stg
−55 to +150 °C
Electrostatic Discharge ESD HM < 8000
MM < 400
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
30 VOLT
DUAL SERIES SCHOTTKY
BARRIER DIODES
3
CATHODE/ANODE
1
ANODE
2
CATHODE
Device Package Shipping
†
ORDERING INFORMATION
BAT54SWT1G SOT−323
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOT−323
CASE 419
STYLE 9
MARKING DIAGRAM
B8M G
G
B8 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
1
NSVBAT54SWT1G SOT−323
(Pb−Free)
3,000 /
Tape & Reel
BAT54SWT1G, NSVBAT54SWT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mA)
V
(BR)R
30 − −
V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
− 7.6 10
pF
Reverse Leakage
(V
R
= 25 V)
I
R
− 0.5 2.0
mAdc
Forward Voltage
(I
F
= 0.1 mAdc)
V
F
− 0.22 0.24
Vdc
Forward Voltage
(I
F
= 30 mAdc)
V
F
− 0.41 0.5
Vdc
Forward Voltage
(I
F
= 100 mAdc)
V
F
− 0.52 0.8
Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
t
rr
− − 5.0
ns
Forward Voltage
(I
F
= 1.0 mAdc)
V
F
− 0.29 0.32
Vdc
Forward Voltage
(I
F
= 10 mAdc)
V
F
− 0.35 0.40
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820
W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
T
10%
90%
I
F
I
R
t
rr
T
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measure
d
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAT54SWT1G, NSVBAT54SWT1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
C
T
, TOATAL CAPACITANCE (pF)
100
0.0 0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4
0.5
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
510
15
20
25
0
V
R
, REVERSE VOLTAGE (VOLTS)
51015 30
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
T
A
= 150°C
0.6
−55°C
150°C
125°C
100
1000
30
2520
I
R
, REVERSE CURRENT (mA)
I
F
, FORWARD CURRENT (mA)
14
12
10
8
6
4
2
0
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
P1-P3P4-P4

NSVBAT54SWT1G

Mfr. #:
Buy NSVBAT54SWT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SS SHKY DIO 30V TR
Lifecycle:
New from this manufacturer.
Delivery:
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