MJF45H11G

MJF44H11 (NPN), MJF45H11 (PNP)
http://onsemi.com
4
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
V
CE
= 4 V
T
J
= 125°C
25°C
-40°C
1000
0.1
Figure 4. MJF44H11 DC Current Gain
10
110
100
Figure 5. MJF45H11 DC Current Gain
Figure 6. MJF44H11 Current Gain
versus Temperature
Figure 7. MJF45H11 Current Gain
versus Temperature
I
C
/I
B
= 10
T
J
= 25°C
0.1
Figure 8. MJF44H11 OnVoltages
I
C
, COLLECTOR CURRENT (AMPS)
1
0.8
SATURATION VOLTAGE (VOLTS)
1.2
0.4
0
0.6
0.2
110
T
J
= 25°C
Figure 9. MJF45H11 OnVoltages
V
CE
= 1 V
I
C
/I
B
= 10
T
J
= 25°C
0.1
I
C
, COLLECTOR CURRENT (AMPS)
1
0.8
SATURATION VOLTAGE (VOLTS)
1.2
0.4
0
0.6
0.2
110
h
FE
, DC CURRENT GAIN
1000
0.1
10
110
100
V
CE
= 1 V
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
V
CE
= 4 V
1000
0.1
10
110
100
T
J
= 25°C
1 V
T
J
= 125°C
25°C
-40°C
h
FE
, DC CURRENT GAIN
1000
0.1
10
110
100
V
CE
= 1 V
V
BE(sat)
V
CE(sat)
V
BE(sat)
V
CE(sat)
MJF44H11 (NPN), MJF45H11 (PNP)
http://onsemi.com
5
PACKAGE DIMENSIONS
TO220 FULLPAK
CASE 221D03
ISSUE J
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.617 0.635 15.67 16.12
INCHES
B 0.392 0.419 9.96 10.63
C 0.177 0.193 4.50 4.90
D 0.024 0.039 0.60 1.00
F 0.116 0.129 2.95 3.28
G 0.100 BSC 2.54 BSC
H 0.118 0.135 3.00 3.43
J 0.018 0.025 0.45 0.63
K 0.503 0.541 12.78 13.73
L 0.048 0.058 1.23 1.47
N 0.200 BSC 5.08 BSC
Q 0.122 0.138 3.10 3.50
R 0.099 0.117 2.51 2.96
S 0.092 0.113 2.34 2.87
U 0.239 0.271 6.06 6.88
B
Y
G
N
D
L
K
H
A
F
Q
3 PL
123
M
B
M
0.25 (0.010) Y
SEATING
PLANE
T
U
C
S
J
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
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MJF45H11G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 10A 80V 50W PNP
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