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MJF44H11

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 6
1 Publication Order Number:
MJF44H11/D
MJF44H11 (NPN),
MJF45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
For Isolated Package Applications
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
80 Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current − Continuous
− Peak
I
C
10
20
Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
36
0.288
W
W/°C
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
2.0
0.016
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.5 °C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJF44H11 TO−220 FULLPACK
ISOLATED TO−220
CASE 221D
STYLE 2
50 Units/Rail
3
1
2
Preferred devices are recommended choices for future use
and best overall value.
SILICON POWER TRANSISTORS
10 AMPERES
80 VOLTS, 36 WATTS
MJF45H11 50 Units/Rail
http://onsemi.com
MJF45H11G 50 Units/Rail
MJF44H11G TO−220 FULLPACK
(Pb−Free)
50 Units/Rail
TO−220 FULLPACK
TO−220 FULLPACK
(Pb−Free)
F4xH11 = Specific Device Code
x = 4 or 5
G=Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
F4xH11G
AYWW
MARKING DIAGRAM
MJF44H11 (NPN), MJF45H11 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 30 mA, I
B
= 0)
V
CEO(sus)
80 − − Vdc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
BE
= 0)
I
CES
− − 1.0
mA
Emitter Cutoff Current
(V
EB
= 5 Vdc)
I
EBO
− − 10
mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.4 Adc)
V
CE(sat)
− − 1.0 Vdc
Base−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
V
BE(sat)
− − 1.5 Vdc
DC Current Gain
(V
CE
= 1 Vdc, I
C
= 2 Adc)
h
FE
60 − − −
DC Current Gain
(V
CE
= 1 Vdc, I
C
= 4 Adc)
40 − −
DYNAMIC CHARACTERISTICS
Collector Capacitance
(V
CB
= 10 Vdc, f
test
= 1 MHz) MJF44H11
MJF45H11
C
cb
−
−
130
230
−
−
pF
Gain Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 20 MHz) MJF44H11
MJF45H11
f
T
−
−
50
40
−
−
MHz
SWITCHING TIMES
Delay and Rise Times
(I
C
= 5 Adc, I
B1
= 0.5 Adc) MJF44H11
MJF45H11
t
d
+ t
r
−
−
300
135
−
−
ns
Storage Time
(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc) MJF44H11
MJF45H11
t
s
−
−
500
500
−
−
ns
Fall Time
(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc) MJF44H11
MJF45H11
t
f
−
−
140
100
−
−
ns
Figure 1. Thermal Response
t, TIME (ms)
0.01
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
Z
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02
100 200
0.1
0.02
0.01
MJF44H11 (NPN), MJF45H11 (PNP)
http://onsemi.com
3
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
100
1.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0 10
T
C
≤ 70° C
DUTY CYCLE ≤ 50%
I
C
, COLLECTOR CURRENT (AMPS)
2.0 3.0 20 30 50 100
1.0
7.0
MJF44H11/MJF45H11
70
1.0 ms
dc
0.1
0.2
0.3
0.5
2.0
3.0
5.0
10
20
30
50
10 ms
100 ms
1.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
v 150°C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 3. Power Derating
0
T, TEMPERATURE (°C)
0
40 60 100 120 160
40
T
C
20
60
P
D
, POWER DISSIPATION (WATTS)
0
2.0
T
A
1.0
3.0
80 140
T
C
T
A
20
P1-P3P4-P5

MJF44H11

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
TRANS NPN 80V 10A TO220FP
Lifecycle:
New from this manufacturer.
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