2004 Mar 22 3
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
continuous forward current 200 mA
I
ZSM
non-repetitive peak reverse current t
p
= 100 μs; square wave;
T
amb
= 25 °C prior to surge
see Table 2
P
tot
total power dissipation T
amb
= 25 °C; note 1;
see Fig.2
400 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-s)
thermal resistance from junction to soldering point 130 K/W
R
th(j-a)
thermal resistance from junction to ambient note 1 340 K/W
2004 Mar 22 4
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
CHARACTERISTICS
Table 1 Total series
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage I
F
= 10 mA; see Fig.3 0.9 V
I
F
= 100 mA; see Fig.3 1.1 V
I
R
reverse current
PDZ2.4B V
R
= 1 V 50 μA
PDZ2.7B V
R
= 1 V 20 μA
PDZ3.0B V
R
= 1 V 10 μA
PDZ3.3B V
R
= 1 V 5 μA
PDZ3.6B V
R
= 1 V 5 μA
PDZ3.9B V
R
= 1 V 3 μA
PDZ4.3B V
R
= 1 V 3 μA
PDZ4.7B V
R
= 1 V 2 μA
PDZ5.1B V
R
= 1.5 V 2 μA
PDZ5.6B V
R
= 2.5 V 1 μA
PDZ6.2B V
R
= 3 V 500 nA
PDZ6.8B V
R
= 3.5 V 500 nA
PDZ7.5B V
R
= 4 V 500 nA
PDZ8.2B V
R
= 5 V 500 nA
PDZ9.1B V
R
= 6 V 500 nA
PDZ10B V
R
= 7 V 100 nA
PDZ11B V
R
= 8 V 100 nA
PDZ12B V
R
= 9 V 100 nA
PDZ13B V
R
= 10 V 100 nA
PDZ15B V
R
= 11 V 50 nA
PDZ16B V
R
= 12 V 50 nA
PDZ18B V
R
= 13 V 50 nA
PDZ20B V
R
= 15 V 50 nA
PDZ22B V
R
= 17 V 50 nA
PDZ24B V
R
= 19 V 50 nA
PDZ27B V
R
= 21 V 50 nA
PDZ30B V
R
= 23 V 50 nA
PDZ33B V
R
= 25 V 50 nA
PDZ36B V
R
= 27 V 50 nA
2004 Mar 22 5
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
Table 2 Per type
T
j
= 25 °C unless otherwise specified.
TYPE
NUMBER
WORKING VOLTAGE
V
Z
(V)
at
I
Z
= 5 mA
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at
I
Z
= 5 mA
(see Figs 4 and 5)
DIODE CAP.
C
d
(pF) at
f
= 1 MHz;
V
R
= 0
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100 μs;
T
amb
= 25 °C
MIN. MAX. MAX.
at I
Z
(mA)
MAX.
at I
Z
(mA)
TYP. MAX. MAX.
PDZ2.4B 2.43 2.63 1 000 0.5 100 5 1.6 450 8.0
PDZ2.7B 2.69 2.91 1 000 0.5 100 5 2.0 440 8.0
PDZ3.0B 2.85 3.07 1 000 0.5 95 5 2.1 425 8.0
PDZ3.3B 3.32 3.53 1 000 0.5 95 5 2.4 410 8.0
PDZ3.6B 3.60 3.85 500 1.0 90 5 2.4 390 8.0
PDZ3.9B 3.89 4.16 500 1.0 90 5 2.5 370 8.0
PDZ4.3B 4.17 4.48 600 1.0 90 5 2.5 350 8.0
PDZ4.7B 4.55 4.75 600 1.0 90 5 1.4 325 8.0
PDZ5.1B 4.96 5.20 250 0.5 60 5 0.3 300 5.5
PDZ5.6B 5.48 5.73 100 0.5 50 5 1.9 275 5.5
PDZ6.2B 6.06 6.33 80 0.5 50 5 2.7 250 5.5
PDZ6.8B 6.65 6.93 60 0.5 40 5 3.4 215 5.5
PDZ7.5B 7.28 7.60 60 0.5 10 5 4.0 170 3.5
PDZ8.2B 8.02 8.36 60 0.5 10 5 4.6 150 3.5
PDZ9.1B 8.85 9.23 60 0.5 10 5 5.5 120 3.5
PDZ10B 9.77 10.21 60 0.5 10 5 6.4 110 3.5
PDZ11B 10.78 11.22 60 0.5 10 5 7.4 108 3.0
PDZ12B 11.74 12.24 80 0.5 10 5 8.4 105 3.0
PDZ13B 12.91 13.49 80 0.5 10 5 9.4 103 2.5
PDZ15B 14.34 14.98 80 0.5 15 5 11.4 99 2.0
PDZ16B 15.85 16.51 80 0.5 20 5 12.4 97 1.5
PDZ18B 17.56 18.35 80 0.5 20 5 14.4 93 1.5
PDZ20B 19.52 20.39 100 0.5 20 5 16.4 88 1.5
PDZ22B 21.54 22.47 100 0.5 25 5 18.4 84 1.3
PDZ24B 23.72 24.78 120 0.5 30 5 20.4 80 1.3
PDZ27B 26.19 27.53 150 0.5 40 5 23.4 73 1.0
PDZ30B 29.19 30.69 200 0.5 40 5 26.6 66 1.0
PDZ33B 32.15 33.79 250 0.5 40 5 29.7 60 0.9
PDZ36B 35.07 36.87 300 0.5 60 5 33.0 59 0.8

PDZ8.2BF

Mfr. #:
Manufacturer:
Nexperia
Description:
Zener Diodes PDZ8.2B/SOD2/REEL 13" Q1/T1 *S
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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