Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 20 V; I
D
= 100 mA, pulse test 40 mS
C
iss
133 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 24 pF
C
rss
6.6 pF
t
d(on)
15 ns
t
r
V
DS
= 500 V, I
D
= 50 mA 137 ns
t
d(off)
V
GS
= 10 V, R
G
= 50 Ω (External) 11 n s
t
f
131 ns
Q
g(on)
7.5 nC
Q
gs
V
GS
= 10 V, V
DS
= 500 V, I
D
= 50 mA 2.2 nC
Q
gd
3.0 nC
∆∆
∆∆
∆I
A(P)
/
∆∆
∆∆
∆T Plateau Current Shift V
DS
= 10 V, V
GS
= 10 V
±
50 ppm/K
with Temperature
∆∆
∆∆
∆V
AK
/
∆∆
∆∆
∆ I
A(p)
Dynamic Resistance V
DS
= 20 V, V
GS
= 10 V 125 kΩ
V
F
I
F
= 50mA 1.8 V
R
thJC
3.1 K/W
R
thCA
TO-220 80 K/W
TO-251/252 100 K/W
IXCP 01N90E
IXCY 01N90E
TO-252 AA Outline
Dim. Millimeter Inches
Min. Max.Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
TO-220 AB Dimensions
