MUBW50-12A8 Datasheet MUBW50-12A8 | P1-P3

1 -4

20070912a

IXYS reserves the right to change limits, test conditions and dimensions.

MUBW 50-12 A8

Converter - Brake - Inverter Module (CBI3)

Application: AC motor drives with

€

€ Input from single or three phase grid

€

€ Three phase synchronous or

asynchronous motor

€

€ electric braking operation

Features

€

€ High level of integration - only one power

semiconductor module required for the

whole drive

€

€ NPT IGBT technology with low

saturation voltage, low switching

losses, high RBSOA and short circuit

ruggedness

€

€ Epitaxial free wheeling diodes with

Hiperfast and soft reverse recovery

€

€ Industry standard package with insulated

copper base plate and soldering pins for

PCB mounting

€

€ Temperature sense included

NTC

D11 D13 D15

D12

D14

D16

1

23

D7

T7

T1

D1

T3

D3

T2

T4

T6

T5

D4

D2

D6

D5

21

22

7

6

4

5

16

15

18

17

20

19

11

10

23

24

14

8

9

12 13

Preliminary data

Three Phase Brake Chopper Three Phase

Rectifier Inverter

V

RRM

= 1600 V V

CES

= 1200 V V

CES

= 1200 V

I

FAVM

= 70 A I

C25

= 50 A I

C25

= 85 A

I

FSM

= 700 A V

CE(sat)

= 2.5 V V

CE(sat)

= 2.2 V

Input Rectifier D11 - D16

Symbol Conditions Maximum Ratings

V

RRM

1600 V

I

FAV

T

C

= 80°C; sine 180° 50 A

I

DAVM

T

C

= 80°C; rectangular; d = 1/3; bridge 140 A

I

FSM

T

VJ

= 25°C; t = 10 ms; sine 50 Hz 700 A

P

tot

T

C

= 25°C 135 W

Symbol Conditions Characteristic Values

(T

VJ

= 25°C, unless otherwise specified)

min. typ. max.

V

F

I

F

= 50 A; T

VJ

= 25°C 1.1 1.3 V

T

VJ

= 125°C 1.1 V

I

R

V

R

= V

RRM

;

T

VJ

= 25°C 0.05 mA

T

VJ

= 125°C 0.8 mA

R

thJC

(per diode) 0.94 K/W

See outline drawing for pin arrangement

E72873

2 -4

20070912a

IXYS reserves the right to change limits, test conditions and dimensions.

MUBW 50-12 A8

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at V

GE

= 15 V; T

J

= 125°C)

T1-T6

V

0

= 1.5 V; R

0

= 20 m

Ω

T7

V

0

= 1.5 V; R

0

= 40 m

Ω

Diode (typ. at T

J

= 125°C)

D1-D6

V

0

= 1.25 V; R

0

= 5.5 m

Ω

D7

V

0

= 1.3 V; R

0

= 30 m

Ω

D11-D16

V

0

= 0.85 V; R

0

= 5 m

Ω

Thermal Response

IGBT (typ.)

T1-T6

C

th1

= 0.216 J/K; R

th1

= 0.264 K/W

C

th2

= 1.338 J/K; R

th2

= 0.086 K/W

T7

C

th1

= 0.134 J/K; R

th1

= 0.424 K/W

C

th2

= 0.986 J/K; R

th2

= 0.126 K/W

Diode (typ.)

D1-D6

C

th1

= 0.138 J/K; R

th1

= 0.48 K/W

C

th2

= 0.957 J/K; R

th2

= 0.13 K/W

D7

C

th1

= 0.038 J/K; R

th1

= 1.725 K/W

C

th2

= 0.439 J/K; R

th2

= 0.375 K/W

D11-D16

C

th1

= 0.086 J/K; R

th1

= 0.738 K/W

C

th2

= 0.621 J/K; R

th2

= 0.202 K/W

Output Inverter T1 - T6

Symbol Conditions Maximum Ratings

V

CES

T

VJ

= 25°C to 150°C 1200 V

V

GES

Continuous

±

20 V

I

C25

T

C

= 25°C 85 A

I

C80

T

C

= 80°C 60 A

RBSOA V

GE

=

±

15 V; R

G

= 22 Ω; T

VJ

= 125°C I

CM

= 100 A

Clamped inductive load; L = 100 µH V

CEK

≤ V

CES

t

SC

V

CE

= V

CES

; V

GE

=

±

15 V; R

G

= 22 Ω; T

VJ

= 125°C 10 µs

(SCSOA) non-repetitive

P

tot

T

C

= 25°C 350 W

Symbol Conditions Characteristic Values

(T

VJ

= 25°C, unless otherwise specified)

min. typ. max.

V

CE(sat)

I

C

= 50 A; V

GE

= 15 V; T

VJ

= 25°C 2.2 2.6 V

T

VJ

= 125°C 2.5 V

V

GE(th)

I

C

= 2 mA; V

GE

= V

CE

4.5 6.5 V

I

CES

V

CE

= V

CES

;

V

GE

= 0 V; T

VJ

= 25°C 3.7 mA

T

VJ

= 125°C 3.1 mA

I

GES

V

CE

= 0 V; V

GE

=

±

20 V 200 nA

t

d(on)

100 ns

t

r

70 ns

t

d(off)

500 ns

t

f

70 ns

E

on

7.6 mJ

E

off

5.6 mJ

C

ies

V

CE

= 25 V; V

GE

= 0 V; f = 1 MHz 3.3 nF

Q

Gon

V

CE

= 600 V; V

GE

= 15 V; I

C

= 50 A 230 nC

R

thJC

(per IGBT) 0.35 K/W

Inductive load, T

VJ

= 125°C

V

CE

= 600 V; I

C

= 50 A

V

GE

=

±

15 V; R

G

= 22 Ω

Output Inverter D1 - D6

Symbol Conditions Maximum Ratings

I

F25

T

C

= 25°C 110 A

I

F80

T

C

= 80°C 70 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

I

F

= 50 A; V

GE

= 0 V; T

VJ

= 25°C 2.1 2.5 V

T

VJ

= 125°C 1.5 V

I

RM

I

F

= 60 A; di

F

/dt = -500 A/µs; T

VJ

= 125°C 41 A

t

rr

V

R

= 600 V; V

GE

= 0 V 200 ns

R

thJC

(per diode) 0.61 K/W

3 -4

20070912a

IXYS reserves the right to change limits, test conditions and dimensions.

MUBW 50-12 A8

Brake Chopper T7

Symbol Conditions Maximum Ratings

V

CES

T

VJ

= 25°C to 150°C 1200 V

V

GES

Continuous

±

20 V

I

C25

T

C

= 25°C 50 A

I

C80

T

C

= 80°C 35 A

RBSOA V

GE

=

±

15 V; R

G

= 47 Ω; T

VJ

= 125°C I

CM

= 50 A

Clamped inductive load; L = 100 µH V

CEK

≤ V

CES

t

SC

V

CE

= V

CES

; V

GE

=

±

15 V; R

G

= 47 Ω; T

VJ

= 125°C 10 µs

(SCSOA) non-repetitive

P

tot

T

C

= 25°C 225 W

Symbol Conditions Characteristic Values

(T

VJ

= 25°C, unless otherwise specified)

min. typ. max.

V

CE(sat)

I

C

= 35 A; V

GE

= 15 V; T

VJ

= 25°C 2.5 3.1 V

T

VJ

= 125°C 2.9 V

V

GE(th)

I

C

= 1 mA; V

GE

= V

CE

4.5 6.5 V

I

CES

V

CE

= V

CES

;

V

GE

= 0 V; T

VJ

= 25°C 0.8 mA

T

VJ

= 125°C 0.8 mA

I

GES

V

CE

= 0 V; V

GE

=

±

20 V 200 nA

t

d(on)

100 ns

t

r

70 ns

t

d(off)

500 ns

t

f

70 ns

E

on

5.3 mJ

E

off

3.9 mJ

C

ies

V

CE

= 25 V; V

GE

= 0 V; f = 1 MH z 1.6 nF

Q

Gon

V

CE

= 600 V; V

GE

= 15 V; I

C

= 25 A 120 nC

R

thJC

0.55 K/W

Inductive load, T

VJ

= 125°C

V

CE

= 600 V; I

C

= 35 A

V

GE

=

±

15 V; R

G

= 47 Ω

Brake Chopper D7

Symbol Conditions Maximum Ratings

V

RRM

T

VJ

= 25°C to 150°C 1200 V

I

F25

T

C

= 25°C 25 A

I

F80

T

C

= 80°C 16 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

I

F

= 35 A; T

VJ

= 25°C 3.0 3.4 V

T

VJ

= 125°C 2.3 V

I

R

V

R

= V

RRM

;

T

VJ

= 25°C 0.1 mA

T

VJ

= 125°C 0.1 mA

I

RM

I

F

= 15 A; di

F

/dt = -400 A/µs; T

VJ

= 125°C 16 A

t

rr

V

R

= 600 V 130 ns

R

thJC

2.1 K/W

MUBW50-12A8

MUBW50-12A8

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