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FCX717TA

P1-P2
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - MAY 1999
FEATURES
* 2W POWER DISSIPATION
* 10A Peak Pulse Current
* Excellent H
FE
Characteristics up to 10 Amps
* Extremely Low Saturation Voltage E.g. 12mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
77m at 3A
Partmarking Detail - 717
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-12 V
Collector-Emitter Voltage V
CEO
-12 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current ** I
CM
-10 A
Continuous Collector Current I
C
-3 A
Base Current I
B
-500 mA
Power Dissipation at T
amb
=25°C P
tot
1†
2‡
W
W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX717
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-12 -35 V
I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-12 -25 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -8.5 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-100 nA V
CB
=-10V
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-4V
Collector Emitter
Cut-Off Current
I
CES
-100 nA V
CES
=-10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-12
-110
-230
-20
-150
-320
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-3A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.92 -1.05 V I
C
=-3A, I
B
=-50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-0.85 -1.0 V I
C
=-3A, V
CE
=-2V*
Static Forward Current
Transfer
Ratio
h
FE
300
300
160
60
45
475
450
240
100
70
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
I
C
=-8A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
Transition
Frequency
f
T
80 110 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
21 30 pF V
CB
=-10V, f=1MHz
Turn-On Time t
(on)
70 ns V
CC
=-6V, I
C
=-2A
I
B1
=I
B2
=50mA
Turn-Off Time t
(off)
130 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FCX717
P1-P2

FCX717TA

Mfr. #:
Buy FCX717TA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP Low Saturation
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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