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MIO1800-17E10
P1-P3
P4-P6
© 2011 IXYS All rights reserved
4 - 6
MIO 1800-17E10
20110119a
Fig. 12 Typical diode forward characteristics,
chip level
Fig. 9 Typical switching timesvs collector current
Fig. 10 Typical switching timesvs gate resistor
Fig. 11 Turn-off safe operating area (RBSOA)
Fig. 7 Typical switching energies per pulse
vs collector current
Fig. 8 Typical switching energies per pulse
vs gate resistor
0.0
0.5
1.0
1.5
2.0
0
1000
2000
3000
4000
I
C
[A]
E
on
, E
off
[J]
V
CC
= 900 V
R
G
= 0.82 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
E
on
E
of
f
0
0.5
1
1.5
2
2.5
02468
R
G
[ohm]
E
on
, E
off
[J]
V
CC
= 900 V
I
C
= 1800 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60
nH
E
on
E
off
0.1
1
10
0
1000
2000
3000
4000
I
C
[A]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
V
CC
= 90
0 V
R
G
= 0.82 ohm
V
GE
= ±15 V
T
vj
= 12
5 °C
L
σ
= 60 nH
t
d(on)
t
d(of
f)
t
r
t
f
0.1
1
10
02468
Rg [ohm]
td(on)
, tr, td(off)
, tf [µs]
V
CC
= 9
00 V
I
C
= 1800 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
t
d(on)
t
d(off)
t
r
t
f
0
0.5
1
1.5
2
2.5
0
500
1000
1500
2000
V
CE
[V]
I
Cpuls
e
/ I
C
Chip
Module
V
CC
≤
1300 V
0
400
800
1200
1600
2000
2400
2800
3200
3600
00
.
511
.
52
2
.
5
V
F
[V]
I
F
[A]
125°C
25°C
p h a s e - o u t
© 2011 IXYS All rights reserved
5 - 6
MIO 1800-17E10
20110119a
Fig. 14 Typical reverse recovery characteristics
vs gate resistor
Fig. 15 Thermal impedance vs time
Fig. 13 Typical reverse recovery characteristics
vs forward current
i
1 2 3 4
R
i
(K/kW
) 5.97
1.99
0.619
0.465
IGBT
τ
i
(m
s)
179 22
2.4
0.54
R
i
(K/kW
)
11.1 3.36 1.
27 1.34
DIODE
τ
i
(m
s)
189 30
7.4 1.4
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
c)
-
(j
th
∑
=
i
τ
0
100
200
300
400
500
600
700
800
0
1000
2000
3000
4000
I
F
[A]
E
rec
[mJ]
0
500
1000
1500
2000
I
RM
[A], Q
RR
[µC]
V
CC
= 900 V
R
G
= 0.82 ohm
T
vj
= 125 °C
L
σ
= 60 nH
E
re
c
Q
RR
I
RM
0
100
200
300
400
500
600
700
800
900
02468
R
G
[oh
m]
E
rec
[mJ]
0
200
400
600
800
1000
1200
1400
1600
1800
I
RM
[A],
Q
RR
[µC]
V
CC
= 900 V
I
F
= 1800 A
T
vj
= 125 °C
L
σ
= 60 nH
E
rec
I
RM
Q
RR
0.0001
0.001
0.01
0.1
0.001
0.01
0.1
1
10
t [s]
Z
th(j
-h)
[K
/W] IGBT, DI
ODE
Z
th(j
-c)
IGBT
Z
th(j-c
)
Diode
p h a s e - o u t
© 2011 IXYS All rights reserved
6 - 6
MIO 1800-17E10
20110119a
Outline drawing
'
'
Note: all dimensions are shown in mm
p h a s e - o u t
P1-P3
P4-P6
MIO1800-17E10
Mfr. #:
Buy MIO1800-17E10
Manufacturer:
Description:
MOD IGBT SGL SWITCH 1700V E10
Lifecycle:
New from this manufacturer.
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MIO1800-17E10