1
Features
Single Voltage, Range 3V to 3.6V Supply
3-volt Only Read and Write Operation
Software Protected Programming
Fast Read Access Time - 100 ns
Low Power Dissipation
15mAActiveCurrent
40 µA CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (256 Bytes/Sector)
Internal Address and Data Latches for 256 Bytes
Two 8K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29LV020 is a 3-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 2 megabits of memory is organized as 262,144 bytes by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 100 ns with power dissipation of just 54 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
less than 40 µA. The device endurance is such that any sector can typically be written
to in excess of 10,000 times.
2-megabit
(256K x 8)
3-volt Only
Flash Memory
AT29LV020
Rev. 0565C–FLASH–05/02
PLCC Top View
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
NC
VCC
WE
A17
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
2
AT29LV020
0565CFLASH05/02
To allow for simple in-system reprogrammability, the AT29LV020 does not require high input
voltages for programming. Five-volt-only commands determine the operation of the device.
Reading data out of the device is similar to reading from an EPROM. Reprogramming the
AT29LV020 is performed on a sector basis; 256 bytes of data are loaded into the device and
then simultaneously programmed.
During a reprogram cycle, the address locations and 256 bytes of data are captured at micro-
processor speed and internally latched, freeing the address and data bus for other operations.
Following the initiation of a program cycle, the device will automatically erase the sector and
then program the latched data using an internal control timer. The end of a program cycle can
be detected by DATA
polling of I/O7. Once the end of a program cycle has been detected, a
new access for a read or program can begin.
Block Diagram
Device
Operation
READ: The AT29LV020 is accessed like an EPROM. When CE and OE are low and WE is
high, the data stored at the memory location determined by the address pins is asserted on
the outputs. The outputs are put in the high impedance state whenever CE
or OE is high. This
dual-line control gives designers flexibility in preventing bus contention.
SOFTWARE DATA PROTECTION PROGRAMMING: The AT29LV020 has 1024 individual
sectors, each 256 bytes. Using the software data protection feature, byte loads are used to
enter the 256 bytes of a sector to be programmed. The AT29LV020 can only be programmed
or reprogrammed using the software data protection feature. The device is programmed on a
sector basis. If a byte of data within the sector is to be changed, data for the entire 256-byte
sector must be loaded into the device. The AT29LV020 automatically does a sector erase
prior to loading the data into the sector. An erase command is not required.
Software data protection protects the device from inadvertent programming. A series of three
program commands to specific addresses with specific data must be presented to the device
before programming may occur. The same three program commands must begin each pro-
gram operation. All software program commands must obey the sector program timing
specifications. Power transitions will not reset the software data protection feature, however
the software feature will guard against inadvertent program cycles during power transitions.
Any attempt to write to the device without the 3-byte command sequence will start the internal
write timers. No data will be written to the device; however, for the duration of t
WC
, a read oper-
ation will effectively be a polling operation.
After the software data protections 3-byte command code is given, a byte load is performed
by applying a low pulse on the WE
or CE input with CE or WE low (respectively) and OE high.
3
AT29LV020
0565CFLASH05/02
The address is latched on the falling edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE
or WE.
The 256 bytes of data must be loaded into each sector. Any byte that is not loaded during the
programming of its sector will be erased to read FFH. Once the bytes of a sector are loaded
into the device, they are simultaneously programmed during the internal programming period.
After the first data byte has been loaded into the device, successive bytes are entered in the
same manner. Each new byte to be programmed must have its high to low transition on WE
(or CE) within 150 µs of the low to high transition of WE (or CE) of the preceding byte. If a high
to low transition is not detected within 150 µs of the last low to high transition, the load period
will end and the internal programming period will start. A8 to A17 specify the sector address.
The sector address must be valid during each high to low transition of WE
(or CE). A0 to A7
specify the byte address within the sector. The bytes may be loaded in any order; sequential
loading is not required. Once a programming operation has been initiated, and for the duration
of t
WC
, a read operation will effectively be a polling operation.
HARDWARE DATA PROTECTION: Hardware features protect against inadvertent pro-
grams to the AT29LV020 in the following ways: (a) V
CC
sense if V
CC
is below 1.8V (typical),
the program function is inhibited; (b) V
CC
power on delay once V
CC
has reached the V
CC
sense level, the device will automatically time out 10 ms (typical) before programming; (c) Pro-
gram inhibit holding any one of OE
low, CE high or WE high inhibits program cycles; and
(d) Noise filter pulses of less than 15 ns (typical) on the WE
or CE inputs will not initiate a
program cycle.
INPUT LEVELS: While operating with a 3.3V ± 10% power supply, the address inputs and
control inputs (OE
,CEand WE) may be driven from 0 to 5.5V without adversely affecting the
operation of the device. The I/O lines can be driven from 0 to 3.6V.
PRODUCT IDENTIFICATION: The product identification mode identifies the device and
manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware
operation mode can be used by an external programmer to identify the correct programming
algorithm for the Atmel product. In addition, users may wish to use the software product identi-
fication mode to identify the part (i.e., using the device code), and have the system software
use the appropriate sector size for program operations. In this manner, the user can have a
common board design for 256K to 4-megabit densities and, with each densityssectorsizein
a memory map, have the system software apply the appropriate sector size.
For details, see Operating Modes (for hardware operation) or Software Product Identification.
The manufacturer and device code is the same for both modes.
DATA
POLLING: The AT29LV020 features DATA polling to indicate the end of a program
cycle. During a program cycle an attempted read of the last byte loaded will result in the com-
plement of the loaded data on I/O7. Once the program cycle has been completed, true data is
valid on all outputs and the next cycle may begin. DATA
polling may begin at any time during
the program cycle.
TOGGLE BIT: In addition to DATA
polling the AT29LV020 provides another method for
determining the end of a program or erase cycle. During a program or erase operation, suc-
cessive attempts to read data from the device will result in I/O6 toggling between one and
zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be
read. Examining the toggle bit may begin at any time during a program cycle.
OPTIONAL CHIP ERASE MODE: The entire device can be erased by using a 6-byte soft-
ware code. Please see Software Chip Erase application note for details.

AT29LV020-10JC

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
NOR Flash 2M(256Kx8) 3.3V- 100NS COM TEMP
Lifecycle:
New from this manufacturer.
Delivery:
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