©2000 Fairchild Semiconductor International Rev. A, February 2000
BD376/378/380
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
h
FE
Classificntion
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BD376
: BD378
: BD380
- 50
- 75
- 100
V
V
V
V
CEO
Collector-Emitter Voltage : BD376
: BD378
: BD380
- 45
- 60
- 80
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 2 A
I
CP
*Collector Current (Pulse) - 3 A
I
B
Base Current - 1 A
P
C
Collector Dissipation (T
C
=25°C) 25 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) *Collector-Emitter Sustaining Voltage
: BD376
: BD378
: BD380
I
C
= - 100mA, I
B
= 0 - 45
- 60
- 80
V
V
V
BV
CBO
Collector-Base : BD376
Breakdown Voltage : BD378
: BD380
I
C
= - 100µA, I
E
= 0 - 50
- 75
- 100
V
V
V
I
CBO
Collector Cut-off Current : BD376
: BD378
: BD380
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
- 2
- 2
- 2
µA
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 100 µA
h
FE1
h
FE2
*DC Current Gain V
CE
= - 2V, I
C
= - 0.15A
V
CE
= - 2V, I
C
= - 1A
40
20
375
V
CE
(sat) *Collector-Emitter Saturation Voltage I
C
= - 1A, I
B
= - 0.1A - 1 V
V
BE
(on) *Base-Emitter ON Voltage V
CE
= - 2V, I
C
= -1A - 1.5 V
t
ON
Turn ON Time V
CC
= - 30V, I
C
= - 0.5A
I
B1
= - I
B2
= - 0.05A
R
L
= 60Ω
50 ns
t
OFF
Turn OFF Time 500 ns
Classification6 101625
h
FE1
40 ~ 100 63 ~ 160 100 ~ 250 150 ~ 375
BD376/378/380
Medium Power Linear and Switching
Applications
• Complement to BD375, BD377 and BD379 respectively
1
TO-126
1. Emitter 2.Collector 3.Base
