AD8010ARZ-16-REEL7

AD8010
–3–REV. B
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Plastic Package (N) . . . . . . Observe Power Derating Curves
Small Outline Package (R) . Observe Power Derating Curves
Wide Body SOIC (R-16) . . . Observe Power Derating Curves
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic Package: θ
JA
= 90°C/W
8-Lead SOIC Package: θ
JA
= 122°C/W
16-Lead SOIC Package: θ
JA
= 73°C/W
AMBIENT TEMPERATURE C
3.0
2.5
0
50
MAXIMUM POWER DISSIPATION Watts
2.0
1.5
1.0
0.5
40 30 20 10 0 10 203040 5060708090
8-LEAD SOIC PACKAGE
8-LEAD MINI-DIP PACKAGE
16-LEAD SOIC
PACKAGE (WIDEBODY)
T
J
= 150C
Figure 2. Plot of Maximum Power Dissipation vs. Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8010 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Model Temperature Range Package Description Package Options
AD8010AN –40°C to +85°C 8-Lead Plastic DIP N-8
AD8010AR –40°C to +85°C 8-Lead Plastic SOIC SO-8
AD8010AR-16 –40°C to +85°C 16-Lead Wide Body SOIC R-16
AD8010AR-REEL REEL SOIC 13" REEL
AD8010AR-REEL7 REEL SOIC 7" REEL
AD8010AR-16-REEL REEL SOIC 13" REEL
AD8010AR-16-REEL7 REEL SOIC 7" REEL
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8010 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu-
lated devices is determined by the glass transition temperature
of the plastic, approximately +150°C. Temporarily exceeding
this limit may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceed-
ing a junction temperature of +175°C for an extended period
can result in device failure.
While the AD8010 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
AD8010
–4–
REV. B
dG
(
%
)
/d
De
g
rees
60
30
0
0.130.01
PERCENTAGE OF UNITS
0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12
50
40
20
10
d
G = +2
f = 4.43MHz (PAL)
R
L
= 18.75
0
SAMPLE SIZE = 300
dG
dG
dG
dG
d
d
d
d
d d d d d
d
DIFFERENTIAL GAIN dG IN %
DIFFERENTIAL PHASE d IN Degrees
Figure 3. Distribution of Differential Gain (dG) and
Differential Phase (d
φ
); R
L
= 18.75
FREQUENCY MHz
G = +2
V
O
= 2V p-p
R
L
AS SHOWN
45
50
55
60
65
70
75
80
85
90
95
12 56789102034
2ND
R
L
= 18.75
3RD
R
L
= 100
2ND
3RD
HARMONIC DISTORTION dBc
Figure 4. Harmonic Distortion vs. Frequency; G = +2
G = +2
R
L
= 18.75
V
O
= 0.2V p-p
FREQUENCY MHz
0.1 1
GAIN FLATNESS dB
10 100
6.20
6.15
6.10
6.05
6.0
5.95
5.90
5.85
5.80
500
+85C
+25C
40C
Figure 5. Gain Flatness vs. Frequency Over Temperature
(–40
°
C to +85
°
C)
Figure 6. Differential Gain and Phase vs. Number of Video
Loads Over Temperature (–40
°
C to +85
°
C); f = 4.43 MHz
FREQUENCY MHz
45
40
5
1 10010
INTERCEPT POINT dBm
35
30
10
25
20
15
G = +2
R
L
= 18.75
Figure 7. Two-Tone, 3rd Order IMD Intercept vs.
Frequency; G = +2, R
L
= 18.75
6.5
6.4
6.3
6.2
6.1
6.0
5.9
5.8
5.7
5.6
5.5
1
FREQUENCY MHz
G = +2
V
O
= 0.2V p-p
NUMBER OF VIDEO
LOADS AS SHOWN
4
6
8
10
14
12
1
10 100
1000
2
GAIN FLATNESS dB
Figure 8. Gain Flatness vs. Frequency vs. Number of
Video Loads
Typical Performance Characteristics
AD8010
–5–REV. B
5.0355.0155.04.9854.965
FREQUENCY MHz
INTERMODULATION DISTORTION dBm
5
5
15
25
35
45
55
65
75
85
G = +2
R
L
= 18.75
f
O
= 5MHz
f
= 10kHz
4dBm
4dBm
P
OUT
69dBm 69dBm
Figure 9. Intermodulation Distortion
P
OUT
dBm
35
75
105
10 128
TOTAL HARMONIC DISTORTION dBc
6 4 20 246810
45
55
85
95
65
FREQUENCY = 5MHz
G = +2
R
L
= AS SHOWN (SEE SCHEMATIC)
R
L1
= FOR R
L
= 100
R
L1
= 23.1 FOR R
L
= 18.75
50
50
P
OUT
P
IN
R
F
R
G
150
50
R
L1
R
L
= 100
R
L
= 18.75
Figure 10. Total Harmonic Distortion vs. P
OUT
; G = +2
FREQUENCY MHz
2
1
7
0.1 10001
NORMALIZED GAIN dB
10 100
0
1
6
2
3
4
5
GAIN AS SHOWN
V
O
= 0.2V p-p
R
L
= 18.75
G = +1
G = +2
G = +3
Figure 11. Small Signal Closed-Loop Frequency
Response; R
L
= 18.75
FREQUENCY MHz
010123456789
0
10
90
P
MEASURE
dBm
50
60
70
80
30
40
20
R
F
GAIN = 6.6
50
50
R
G
50
150
P
MEASURE
= 10dBm
(FULL SCALE)
500kHz TONE SPACING FROM
500kHz TO 5.5MHz WITH
4 MISSING TONES
Figure 12. Multitone Distortion; R
L
= 100
G = +2
V
O
= 2V p-p
f = 5MHz
LOAD
55
60
65
70
75
80
85
90
15 100 200 300 400 500
2
ND
3
RD
HARMONIC DISTORTION dBc
Figure 13. Harmonic Distortion vs. Load
FREQUENCY MHz
8.0
0.0
1 100010
GAIN dB
100
7.0
6.0
2.0
5.0
4.0
3.0
1.0
G = +2
V
O
= 0.2V p-p
NUMBER OF VIDEO LOADS AS SHOWN
12
4
1
8
Figure 14. Closed-Loop Frequency Response vs.
Number of Video Loads

AD8010ARZ-16-REEL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
High Speed Operational Amplifiers Low Power Hi Crnt Distribution
Lifecycle:
New from this manufacturer.
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