V
RRM
= 50 V - 600 V
I
F
= 200 A
Features
• High Surge Capability Three Tower Package
• Types up to 600 V V
RRM
Parameter Symbol MURT20040 (R) Unit
Re
etitive
eak reverse
MURT20040 thru MURT20060R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Super Fast
Recover
Diode
MURT20060 (R)
voltage
RRM
RMS reverse voltage
V
RMS
283 V
DC blocking voltage
V
DC
400 V
Continuous forward current
I
F
200 A
Operating temperature
T
j
-40 to 175 °C
Storage temperature
T
stg
-40 to 175 °C
Parameter Symbol MURT20040 (R) Unit
Diode forward voltage 1.35
25 μA
1mA
Recovery Time
Maximum reverse recovery
time
T
RR
90 nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
0.18 °C/W
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 125 °C
V
1
160
0.18
A
V
R
= 50 V, T
j
= 25 °C
I
F
= 100 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
2000
T
C
= 25 °C, t
p
= 8.3 ms
25
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
2000
-40 to 175
-40 to 175
1.7
MURT20060 (R)
424
600
200
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