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MJD340-13

P1-P3P4-P4
MJD340
Document number: DS31609 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
MJD340
NEW PRODUCT
HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• High Collector-EmitterVoltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: DPAK
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.34 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
300 V
Collector-Emitter Voltage
V
CEO
300 V
Emitter-Base Voltage
V
EBO
3 V
Continuous Collector Current
I
C
0.5 A
Peak Pulse Collector Current
I
CM
0.75 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @T
C
= 25°C P
D
15 W
Thermal Resistance, Junction to Case
R
θ
JC
8.33 °C/W
Power Dissipation @T
A
= 25°C (Note 3) P
D
1.56 W
Thermal Resistance, Junction to Ambient
R
θ
JA
80 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Sustaining Voltage
V
(
SUS
)
CEO
300
⎯ ⎯
V
I
C
= 1mA, I
B
= 0
Collector Cutoff Current
I
CBO
⎯ ⎯
100
μA
V
CB
= 300V, I
E
= 0
Emitter Cutoff Current
I
EBO
⎯ ⎯
100
μA
V
EB
= 3V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
30
⎯
240
⎯
V
CE
= 10V, I
C
= 50mA
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Top View
Device Schematic
Pin Out Configuration
COLLECTOR
BASE
EMITTER
3
1
24
3
1
2,4
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MJD340
Document number: DS31609 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
MJD340
NEW PRODUCT
0
0
P , POWER DISSIPATION (W)
D
T , AMBIENT TEMPERATURE ( C)
A
°
R = 81°C/W
θ
JA
Fig. 1 Power Dissipation
vs. Ambient Temperature (Note 3)
0.5
1.0
25 50 75 100 125 150
1.5
2.0
0.001
0.01
0.1
1
10
0.1 1 10 100 1,000
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
DC
Pw = -100ms
Pw = -10ms
10
100
1,000
0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical DC Current Gain vs. Collector Current
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLTAGE (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.
2
V, BASE-EMI
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.
2
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
MJD340
Document number: DS31609 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
MJD340
NEW PRODUCT
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
1
10
100
1,000
C
A
P
A
C
I
T
A
N
C
E (p
F
)
C
ibo
C
obo
f = 1MHz
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 8 Transient Thermal Response (Note 3)
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 81°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
Ordering Information (Note 5)
Part Number Case Packaging
MJD340-13 DPAK 2500/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MJD340 = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 08 = 2008)
WW = Week Code 01-52
YWW
MJD340
P1-P3P4-P4

MJD340-13

Mfr. #:
Buy MJD340-13
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT HIGH VOLTAGE NPN SMT
Lifecycle:
New from this manufacturer.
Delivery:
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