SI4833BDY-T1-GE3 Datasheet SI4833BDY-T1-GE3 | P1-P3

Vishay Siliconix

Si4833BDY

Document Number: 67537

S11-1649-Rev. B, 15-Aug-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• LITTLE FOOT

®

Plus Power MOSFET

• 100 % R

g

Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Battery Management in Notebook PC

• Non-synchronous Buck Converter in HDD

Notes:

a. Based on T

C

= 25 °C.

b. Surface mounted on FR4 board.

c. t  10 s.

d. Maximum under steady state conditions is 120 °C/W.

MOSFET PRODUCT SUMMARY

V

DS

(V) R

DS(on)

()

I

D

(A)

a

Q

g

(Typ.)

- 30

0.068 at V

GS

= - 10 V

- 4.6

4.6

0.110 at V

GS

= - 4.5 V

- 3.4

SCHOTTKY PRODUCT SUMMARY

V

KA

(V)

V

F

(V)

Diode Forward Voltage I

D

(A)

a

30 0.44 V at 1 A 2

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage (MOSFET)

V

DS

- 30

V

Reverse Voltage (Schottky)

V

KA

- 30

Gate-Source Voltage (MOSFET)

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C) (MOSFET)

T

C

= 25 °C

I

D

- 4.6

A

T

C

= 70 °C

- 3.6

T

A

= 25 °C

- 3.8

b, c

T

A

= 70 °C

- 3

b, c

Pulsed Drain Current (MOSFET) (t = 300 µs)

I

DM

- 20

Continuous Source Current (MOSFET Diode Conduction)

T

C

= 25 °C

I

S

- 2

T

A

= 25 °C

- 1.4

b, c

Average Forward Current (Schottky)

I

F

- 1.4

b

Pulsed Forward Current (Schottky)

I

FM

- 2

Maximum Power Dissipation (MOSFET and Schottky)

T

C

= 25 °C

P

D

2.75

W

T

C

= 70 °C

1.75

T

A

= 25 °C

1.75

b, c

T

A

= 70 °C

1.10

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

AK

A

K

SD

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4833BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

K

A

S

G

D

P-Channel MOSFET

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (MOSFET and Schottky)

b, c, d

R

thJA

60 71.5

°C/W

Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)

R

thJF

35 45

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Document Number: 67537

S11-1649-Rev. B, 15-Aug-11

Vishay Siliconix

Si4833BDY

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

MOSFET SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

DS

= 0 V, I

D

= - 250 µA

- 30 V

V

DS

Temperature Coefficient

V

DS/TJ

I

D

= - 250 µA

- 20

mV/°C

V

GS(th)

Temperature Coefficient



V

GS(th)/TJ

3.9

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 1 - 1.8 - 2.5 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 30 V, V

GS

= 0 V

- 1

µA

V

DS

= - 30 V, V

GS

= 0 V, T

J

= 75 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

- 5 V, V

GS

= - 10 V

- 5 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 10 V, I

D

= - 3.6 A

0.055 0.068



V

GS

= - 4.5 V, I

D

= - 2.8 A

0.092 0.110

Forward Transconductance

a

g

fs

V

DS

= - 15 V, I

D

= - 3.6 A

6.5 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= - 15 V, V

GS

= 0 V, f = 1 MHz

350

pF

Output Capacitance

C

oss

75

Reverse Transfer Capacitance

C

rss

63

Total Gate Charge

Q

g

V

DS

= - 15 V, V

GS

= - 10 V, I

D

= - 5 A

914

nC

V

DS

= - 15 V, V

GS

= - 4.5 V, I

D

= - 5 A

4.6 7

Gate-Source Charge

Q

gs

1.3

Gate-Drain Charge

Q

gd

2.1

Gate Resistance

R

g

f = 1 MHz 1.5 7.3 14.5 

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 15 V, R

L

= 3 

I

D

 - 5 A, V

GEN

= - 4.5 V, R

g

= 1 

28 50

ns

Rise Time

t

r

73 140

Turn-Off Delay Time

t

d(off)

12 24

Fall Time

t

f

816

Tu r n- O n D e lay T i m e

t

d(on)

V

DD

= - 15 V, R

L

= 3 

I

D

 - 5 A, V

GEN

= - 10 V, R

g

= 1 

612

Rise Time

t

r

918

Turn-Off Delay Time

t

d(off)

12 24

Fall Time

t

f

612

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

I

S

T

C

= 25 °C

- 4.6

A

Pulse Diode Forward Current

a

I

SM

- 20

Body Diode Voltage

V

SD

I

S

= - 2 A, V

GS

= 0 V

- 0.83 - 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= - 2 A, dI/dt = 100 A/µs, T

J

= 25 °C

12 24 ns

Body Diode Reverse Recovery Charge

Q

rr

612nC

Reverse Recovery Fall Time

t

a

8

ns

Reverse Recovery Rise Time

t

b

4

Document Number: 67537

S11-1649-Rev. B, 15-Aug-11

www.vishay.com

3

Vishay Siliconix

Si4833BDY

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SCHOTTKY SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Forward Voltage Drop

V

F

I

F

= 1 A

0.36 0.44

V

I

F

= 1 A, T

J

= 125 °C

0.29 0.35

Maximum Reverse Leakage Current

I

rm

V

R

= 30 V

0.03 0.2

mA

V

R

= 30 V, T

J

= 75 °C

0.6 5

V

R

= 30 V, T

J

= 125 °C

7.5 60

Junction Capacitance

C

T

V

R

= 15 V

5.3 pF

SI4833BDY-T1-GE3

SI4833BDY-T1-GE3

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