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SIA911EDJ-T1-GE3

P1-P3P4-P6P7-P7
Vishay Siliconix
SiA911EDJ
Document Number: 68927
S09-0389-Rev. B, 09-Mar-09
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• New Thermally Enhanced PowerPAK
®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Protection 4000 V
APPLICATIONS
• Load Switch, PA Switch and Battery Switch for Portable
Devices
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
- 20
0.101 at V
GS
= - 4.5 V
- 4.5
a
4.9 nC
0.141 at V
GS
= - 2.5 V
- 4.5
a
0.192 at V
GS
= - 1.8 V
- 2
Marking Code
X X X
D H X
Lot Traceability
and Date code
Part # code
S
1
D
1
G
2
S
2
G
1
D
2
1
6
5
4
2
3
2.05 mm
2.05 mm
PowerPAK SC-70-6 Dual
D
1
D
2
Ordering Information:
SiA911EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
S
2
D
2
600 Ω
G
2
P-Channel MOSFET
S
1
D
1
600 Ω
G
1
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 4.5
a
A
T
C
= 70 °C
- 4.5
a
T
A
= 25 °C
- 3.6
b, c
T
A
= 70 °C
- 2.9
b, c
Pulsed Drain Current
I
DM
- 10
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
- 4.5
a
T
A
= 25 °C
- 1.6
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
7.8
W
T
C
= 70 °C
5
T
A
= 25 °C
1.9
b, c
T
A
= 70 °C
1.2
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t ≤ 5 s
R
thJA
52 65
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
12.5 16
www.vishay.com
2
Document Number: 68927
S09-0389-Rev. B, 09-Mar-09
Vishay Siliconix
SiA911EDJ
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 20 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= - 250 µA
- 21
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
2.1
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.4 - 1 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 µA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
≤ - 5 V, V
GS
= - 4.5 V
- 10 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 2.7 A
0.083 0.101
Ω
V
GS
= - 2.5 V, I
D
= - 2.3 A
0.115 0.141
V
GS
= - 1.8 V, I
D
= - 1 A
0.153 0.192
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 2.7 A
7S
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 3.6 A
7.1 11
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 3.6 A
4.2 6.5
Gate-Source Charge
Q
gs
0.7
Gate-Drain Charge
Q
gd
1.2
Gate Resistance
R
g
f = 1 MHz 600 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 3.5 Ω
I
D
≅ - 2.9 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
92 140
ns
Rise Time
t
r
200 300
Turn-Off Delay Time
t
d(off)
700 1100
Fall Time
t
f
400 600
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 3.5 Ω
I
D
≅ - 2.9 A, V
GEN
= - 8 V, R
g
= 1 Ω
32 50
Rise Time
t
r
70 105
Turn-Off Delay Time
t
d(off)
990 1500
Fall Time
t
f
410 615
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
- 4.5
A
Pulse Diode Forward Current
I
SM
- 10
Body Diode Voltage
V
SD
I
S
= - 2.9 A, V
GS
= 0 V
- 0.9 - 1.2 V
Document Number: 68927
S09-0389-Rev. B, 09-Mar-09
www.vishay.com
3
Vishay Siliconix
SiA911EDJ
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Gate Current vs. Gate-to-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
0
5
10
15
20
02468 10
V
GS
- Gate-to-Source Voltage (V)
I
G
- Gate Current (µA)
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=5thru 2.5 V
V
GS
=2V
V
GS
= 1.5 V
V
GS
=1V, 0.5 V
0.00
0.07
0.14
0.21
0.28
0.35
02468 10
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=2.5V
V
GS
=1.8 V
V
GS
= 4.5 V
Gate Current vs. Gate-to-Source Voltage
Transfer Characteristics
Gate Charge
02468 10
V
GS
- Gate-to-Source Voltage (V)
I
G
- Gate Current (µA)
10
-2
10
-1
1
10
1
10
2
10
3
T
J
= 150 °C
T
J
= 25 °C
0
1
2
3
4
5
0.0 0.4 0.
8 1.2 1.6 2.0
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
2
4
6
8
02468
I
D
=3.6A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=16V
V
DS
=10V
P1-P3P4-P6P7-P7

SIA911EDJ-T1-GE3

Mfr. #:
Buy SIA911EDJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SIA911ADJ-GE3
Lifecycle:
New from this manufacturer.
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