IRFR3706CTRRPBF

P1-P3 P4-P6 P7-P9 P10-P11

IRFR/U3706CPbF

www.irf.com 7

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode Forward Drop

R

e-Applied

V

oltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D =

P. W .

Period

+

-

+

+

+

-

-

-

Fig 14. For N-Channel HEXFET

®

Power MOSFETs

* V

GS

= 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







R

G

V

DD

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• I

SD

controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



*

IRFR/U3706CPbF

8 www.irf.com

D-Pak (TO-252AA) Part Marking Information

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

IRFR/U3706CPbF

www.irf.com 9

I-Pak (TO-251AA) Part Marking Information

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

P1-P3 P4-P6 P7-P9 P10-P11

IRFR3706CTRRPBF

Mfr. #:

Buy IRFR3706CTRRPBF

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 20V 75A DPAK

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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