OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PDTA123YT,215

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
PDTA123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 3 September 2009 6 of 18
NXP Semiconductors
PDTA123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
V
CE
= −5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
V
CE
= −0.3 V
(1) T
amb
= −40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
V
CE
= −5 V
(1) T
amb
= −40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
Fig 4. Off-state input voltage as a function of
collector current; typical values
I
C
(mA)
−10
−1
−10
2
−10−1
006aaa103
10
2
10
10
3
h
FE
1
(1)
(2)
(3)
I
C
(mA)
−1 −10
2
−10
006aaa104
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(3)
(2)
006aaa105
I
C
(mA)
−10
−1
−10
2
−10−1
−1
−10
V
I(on)
(V)
−10
−1
(1)
(3)
(2)
I
C
(mA)
−10
−1
−10−1
006aaa106
−1
−10
V
I(off)
(V)
−10
−1
(1)
(3)
(2)
PDTA123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 3 September 2009 7 of 18
NXP Semiconductors
PDTA123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
8. Package outline
Fig 5. Package outline SOT416 (SC-75)
UNIT
A
1
max
b
p
cD
E
e
1
H
E
L
p
Qw
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
0.5
e
1
1.75
1.45
0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
SOT416 SC-75
w M
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
AB
B
v M
A
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface-mounted package; 3 leads SOT416
04-11-04
06-03-16
PDTA123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 3 September 2009 8 of 18
NXP Semiconductors
PDTA123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Fig 6. Package outline SOT346 (SC-59A/TO-236)
UNIT
A
1
b
p
cD
E
e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
0.95
e
1.9
3.0
2.5
0.33
0.23
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346 TO-236 SC-59A
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w M
v M
A
B
A
B
0 1 2 mm
scale
A
1.3
1.0
0.1
0.013
c
X
12
3
Plastic surface-mounted package; 3 leads SOT346
04-11-11
06-03-16
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

PDTA123YT,215

Mfr. #:
Buy PDTA123YT,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased TRANS RET TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet