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1.6 General Conditions
Unless otherwise specified, minimum and maximum values are guaranteed by production testing.
Typical values are characteristic of the device at 25°C and are the result of engineering evaluations. They are
provided for informational purposes only and are not part of the manufacturing testing requirements.
Unless otherwise noted, all electrical specifications are listed for T
A
=25°C.
1.7 Electrical Specifications
Parameter Conditions Symbol Min Typ Max Units
Load Side Characteristics
Gate Voltage I
F
=2.5mA 7.0 7.3
I
F
=5mA
7.5
8.0 12
I
F
=10mA V
GS
8.4 V
I
F
=2.5mA
4.2 - 14.4
-40°C<T
A
<110°C
Capacitor Voltage 10V<V
DS
<200V V
CAP
10 12.2 16 V
Gate Drive Capability I
F
=2.5mA, V
GS
=0V, V
CAP
=15V I
G_source
23.37
I
F
=0mA, V
GS
=8V, V
CAP
=8V 4.0 9.0 14
mA
I
F
=0mA, V
GS
=4V, V
CAP
=4V I
G_sink
1.5 3.3 6
I
F
=0mA, V
GS
=2V, V
CAP
=2V 0.5 1.2 2
Tur n- O n D el ay V
DS
=48V, V
GS
=4V, C
VG
=4nF
I
F
=2.5mA
t
on
40 140
s
I
F
=5mA 1 12 40
I
F
=10mA 5 20
Turn-Off Delay V
DS
=48V, V
GS
=2V, C
VG
=4nF
I
F
=2.5mA
t
off1
110
s
I
F
=5mA 40 125 400
I
F
=10mA 130
V
DS
=48V, V
GS
=1V, C
VG
=4nF
I
F
=2.5mA
t
off2
200
I
F
=5mA 40 210 600 s
I
F
=10mA 220
Off-State Leakage Current V
DS
=200V I
DS
--1A
LED Characteristics
Forward Voltage Drop I
F
=5mA V
F
11.271.4 V
Input Dropout Current V
GS
=1V I
F
0.2 0.75 1 mA
Reverse Bias Leakage Current V
R
=5V I
R
--10A
Common Characteristics
Input to Output Capacitance - C
I/O
-3-pF
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1.8 Performance Data
Temperature (ºC)
0
20
40
60
80
100
120
I
F
=10mA
I
F
=5mA
I
F
=2.5mA
-20 0 20 40 60 80 100
-40
t
d(on)
vs. Temperature
(V
GS
=4V)
t
d(on)
(μs)
Temperature (ºC)
60
80
100
120
140
160
180
I
F
=10mA
I
F
=2.5mA
I
F
=5mA
-20 0 20 40 60 80 100
-40
t
d(off1)
vs. Temperature
(V
GS
=2V)
t
d(off1)
(μs)
Temperature (ºC)
160
180
200
220
240
260
280
I
F
=10mA
I
F
=5mA
I
F
=2.5mA
-20 0 20 40 60 80 100-40
t
d(off2)
vs. Temperature
(V
GS
=1V)
t
d(off2)
(μs)
Temperature (ºC)
30
40
50
60
70
80
90
100
110
120
-20 0 20 40 60 80 100-40
Time Constant (
τ
) vs. Temperature
(I
F
=5mA)
τ
(μs)
Temperature (ºC)
IG_source (mA)
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
GS
=2V
V
GS
=4V
-20 0 20 40 60 80 100
-40
Gate Source Current vs. Temperature
(I
F
=5mA, V
CAP
=15V)
Temperature (ºC)
-20 0 20 40 60 80 100
IG_sink (mA)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
=4V
V
GS
=2V
-40
Gate Sink Current vs. Temperature
(I
F
=0mA, V
GS
=V
CAP
)
The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in
the written specifications, please contact our application department.
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2. Introduction
The CPC1590 is a MOSFET Gate Driver that requires
no external power supply. It can regulate an input
voltage, up to 200V, down to 12.2V for internal use. It
is specifically designed for low-duty-cycle switching
frequencies that drive 4nF of gate capacitance.
3. Functional Description
The CPC1590 is used in conjunction with a single
MOSFET transistor for remote switching of DC loads
(Figure 2), and two MOSFETS and a diode for remote
switching of low-frequency AC loads (Figure 3) where
isolated power is unavailable.
The device uses external components, most notably a
charge storage capacitor, to satisfy design switching
and over-voltage protection requirements. Because of
this design flexibility, the designer may choose a great
number of MOSFETs for use in a wide variety of
applications. The designer simply needs to know the
MOSFET total gate charge (Q
G
), and with this
information a capacitor can be chosen. The
capacitance of the storage capacitor should be greater
than, or equal to, Q
G
/0.5V.
The CPC1590 has two states of operation:
(1) sufficient input control current is flowing, the LED is
turned on, and the gate current is being applied. The
light from the LED is being reflected onto the
photovoltaic, which then produces a photocurrent that
turns on the NPN bipolar transistor and provides the
charge (I x t = Q), or the gate current that is being
applied to turn on the MOSFET. (2) Sufficient input
control current is not flowing, the LED is turned off,
and gate current is not flowing. The LED is off
because V
F
<< the minimum forward voltage required,
and not enough current is being applied. This turns on
the PNP bipolar transistor, providing a path for gate
current to discharge to V
L2
.
When V
LOAD
is first applied, the external storage
capacitor begins to charge. The charge is sent through
a bootstrap diode to prevent the charge from escaping
and discharging through a turned-on MOSFET. The
J-FET then regulates the voltage between 10V and
16V. The input control current is applied, then the
charge is transferred from the storage capacitor
through the NPN bipolar transistor, along with the
charge from the photovoltaic, to the MOSFET gate to
accomplish a rapid turn-on. After the capacitor has
discharged and the MOSFET has turned on, the
photocurrent from the input optocoupler continues to
flow into the gate to keep the MOSFET turned on.
When the input control current is removed, the gate
current stops flowing and the PNP bipolar transistor is
on and is discharging the MOSFET gate. The
MOSFET is now off. At this point the capacitor begins
to recharge for the next turn on cycle.
The circuit below does not include over-voltage
protection.
Figure 2. CPC1590 DC Application Circuit
2
3
1
4
NC
NC
8
5
6
7
CPC1590
LED +
LED -
CAP
+V
LOAD
G
-V
LOAD
C
ST
LOAD
A
B

CPC1590PTR

Mfr. #:
Manufacturer:
IXYS Integrated Circuits
Description:
Logic Output Optocouplers Optically Isolated Gate Driver
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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