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BC817-40WT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 2
1 Publication Order Number:
BC817−40W/D
BC817-40W
45 V, 0.5 A, General
Purpose NPN Transistor
ON Semiconductor’s BC817−40W is a General Purpose NPN
Transistor that is housed in the SC−70/SOT−323 package.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Collector − Emitter Voltage V
CEO
45 V
Collector − Base Voltage V
CBO
50 V
Emitter − Base Voltage V
EBO
5.0 V
Collector Current − Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1) P
D
460 mW
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
q
JA
272 °C/W
Junction and Storage Temperature
Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm
2
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
CE MG
G
CE = Specific Device Code
M = Date Code
G = Pb−Free Package
1
Device Package Shipping
ORDERING INFORMATION
†
BC817−40WT1G SC−70
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSVBC817−40WT1G SC−70
(Pb−Free)
3000 / Tape &
Reel
BC817−40W
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mA)
V
(VR)CEO
45 − − V
Collector−Emitter Breakdown Voltage
(V
EB
= 0 V, I
C
= 10 mA)
V
(VR)CES
50 − − V
Emitter−Base Breakdown Voltage
(I
E
= 1.0 mA)
V
(VR)EBO
5.0 − − V
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150°C)
I
CBO
−
−
−
−
100
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain (Note 2)
(I
C
= 100 mA, V
CE
= 1.0 V)
(I
C
= 500 mA, V
CE
= 1.0 V)
h
FE
250
40
−
−
600
−
−
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= 500 mA, I
B
= 50 mA)
V
CE(sat)
− − 0.7 V
Base−Emitter On Voltage (Note 2)
(I
C
= 500 mA, V
CE
= 1.0 V)
V
BE(on)
− − 1.2 V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
C
obo
− 10 − pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
BC817−40W
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
700
10.10.010.001
0.001
0.1
1
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1
V
CE
= 1 V
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.7
1.1
V
CE
= 5 V
150°C
−55°C
25°C
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
I
C
, COLLECTOR CURRENT (mA)
10001010.1
10
100
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
1000
100
500
600
0.01
P1-P3P4-P5

BC817-40WT1G

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Buy BC817-40WT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SC70 GP XSTR NPN
Lifecycle:
New from this manufacturer.
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