MS1227.PDF 10-28-02
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MS1227
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
DESCRIPTION: DESCRIPTION:
The MS1227 is a 12.5V epitaxial NPN planar transistor designed
primarily for SSB communications. This device utilizes emitter
ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
V
CBO
Collector-Base Voltage 36 V
V
CEO
Collector-Emitter Voltage 18 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Device Current 4.5 A
P
DISS
Power Dissipation 80 W
T
J
Junction Temperature +200
°°C
T
STG
Storage Temperature -65 to +150
°°C
Thermal DataThermal Data
R
TH(J-C)
Junction-case Thermal Resistance 2.2
°°C/W
Features
• 30 MHz
• 12.5 VOLTS
• GOLD METALIZATION
• P
OUT
= 20 W MINIMUM
• G
P
= 15 dB
• COMMON EMITTER CONFIGURATION