IXSH45N100 Datasheet IXSH45N100 | P1-P3

1 - 4

TO-247 AD (IXSH)

G

C

E

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 1000 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MW 1000 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C75A

I

C90

T

C

= 90°C45A

I

CM

T

C

= 25°C, 1 ms 180 A

SSOA V

GE

= 15 V, T

J

= 125°C, R

G

= 2.7 W I

CM

= 90 A

(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V

CES

t

SC

V

GE

= 15 V, V

CE

= 0.6 • V

CES

, T

J

= 125°C 10ms

(SCSOA) R

G

= 22 W, non repetitive

P

C

T

C

= 25°C 300 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

Weight TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

TO-204 AE (IXSM)

C

G = Gate, C = Collector,

E = Emitter, TAB = Collector

Features

• International standard packages

• Guaranteed Short Circuit SOA

capability

• Low V

CE(sat)

- for low on-state conduction losses

• High current handling capability

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• Uninterruptible power supplies (UPS)

• Welding

Advantages

• Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

• High power density

Low V

CE(sat)

IGBT IXSH 45N100 V

CES

= 1000 V

IXSM 45N100 I

C25

= 75 A

V

CE(sat)

= 2.7 V

Short Circuit SOA Capability

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

BV

CES

I

C

= 3 mA, V

GE

= 0 V 1000 V

V

GE(th)

I

C

= 4 mA, V

CE

= V

GE

58V

I

CES

V

CE

= 0.8 • V

CES

T

J

= 25°C 250 mA

V

GE

= 0 V T

J

= 125°C1mA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

I

C

= I

C90

, V

GE

= 15 V 2.7 V

93013E (12/96)

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

I

C

= I

C90

; V

CE

= 10 V, 20 25 S

Pulse test, t £ 300 ms, duty cycle d £ 2 %

I

C(on)

V

GE

= 15 V, V

CE

= 10 V 195 A

C

ies

4150 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 300 pF

C

res

60 pF

Q

g

165 260 nC

Q

ge

I

C

= I

C90

, V

GE

= 15 V, V

CE

= 0.5 V

CES

40 60 nC

Q

gc

80 200 nC

t

d(on)

80 ns

t

ri

150 ns

t

d(off)

400 ns

t

fi

1000 1500 ns

E

off

15 mJ

t

d(on)

100 ns

t

ri

300 ns

E

on

5.4 mJ

t

d(off)

550 900 ns

t

fi

2200 2900 ns

E

off

25 mJ

R

thJC

0.42 K/W

R

thCK

0.25 K/W

Inductive load, T

J

= 25°C

I

C

= I

C90

, V

GE

= 15 V, L = 100 mH

V

CE

= 0.8 V

CES

, R

G

= 2.7 W

Remarks: Switching times may

increase for V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

Inductive load, T

J

= 125°C

I

C

= I

C90

, V

GE

= 15 V, L = 100 mH

V

CE

= 0.8 V

CES

, R

G

= 2.7 W

Remarks: Switching times

may increase for

V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

IXSH 45N100 IXSM 45N100

TO-247 AD (IXSH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800

B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640

D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216

F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084

H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055

K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209

M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

TO-204 AE (IXSM) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 38.61 39.12 1.520 1.540

B - 22.22 - 0.875

C 6.40 11.40 0.252 0.449

D 1.45 1.60 0.057 0.063

E 1.52 3.43 0.060 0.135

F 30.15 BSC 1.187 BSC

G 10.67 11.17 0.420 0.440

H 5.21 5.71 0.205 0.225

J 16.64 17.14 0.655 0.675

K 11.18 12.19 0.440 0.480

Q 3.84 4.19 0.151 0.165

R 25.16 26.66 0.991 1.050

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 4

V

GE

- Volts

8 9 10 11 12 13 14 15

V

CE

- Volts

0

1

2

3

4

5

6

7

8

9

10

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

BV / V

(th)

- Normalized

0.7

0.8

0.9

1.0

1.1

1.2

1.3

BV

CES

I

C

= 3mA

V

GE(th)

I

C

= 4mA

V

GE

- Volts

4 5 6 7 8 9 10 11 12 13 14 15

I

C

- Amperes

0

10

20

30

40

50

60

70

80

90

T

J

= 125°C

V

CE

= 10V

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

V

CE(sat)

- Normalized

0.6

0.8

1.0

1.2

1.4

1.6

1.8

V

GE

= 15V

V

CE

- Volts

02468101214161820

I

C

- Amperes

0

50

100

150

200

250

300

V

GE

= 15V

T

J

= 25°C

9V

11V

13V

V

CE

- Volts

012345

I

C

- Amperes

0

10

20

30

40

50

60

70

11V

7V

9V

T

J

= 25°C

V

GE

= 15V

T

J

= 25°C

13V

I

C

= 22.5A

I

C

= 45A

I

C

= 90A

I

C

= 22.5A

I

C

= 45A

I

C

= 90A

T

J

= 25°C

T

J

= - 40°C

Fig.3 Collector-Emitter Voltage Fig.4 Temperature Dependence

vs. Gate-Emitter Voltage of Output Saturation Voltage

Fig.5 Input Admittance Fig.6 Temperature Dependence of

Breakdown and Threshold Voltage

Fig.1 Saturation Characteristics Fig.2 Output Characterstics

IXSH 45N100 IXSM 45N100

IXSH45N100

IXSH45N100

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