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SI5459DU-T1-GE3

P1-P3P4-P6P7-P9
Si5459DU
www.vishay.com
Vishay Siliconix
S16-0980-Rev. C, 23-May-16
4
Document Number: 65017
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
0.00
0.03
0.06
0.09
0.12
0.15
2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
=25 °C
T
J
= 125 °C
I
D
= - 6.7 A
0
5
10
15
20
25
30
0.001 0.01 0.1 1 10 100
Time (s)
Power (W)
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
=25 °C
Single Pulse
10 ms
100 ms
BVDSS
Limited
1ms
100 µs
Limited by R
DS(on)
*
DC
10 s
1s
Si5459DU
www.vishay.com
Vishay Siliconix
S16-0980-Rev. C, 23-May-16
5
Document Number: 65017
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power Derating, Junction-to-Case Power Derating, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
3
6
9
12
15
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
0
3
6
9
12
15
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
Si5459DU
www.vishay.com
Vishay Siliconix
S16-0980-Rev. C, 23-May-16
6
Document Number: 65017
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65017
.
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 72 °C/W
3. T
JM
- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
1
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.2
10
-3
10
-2
110
-1
10
-4
0.1
0.05
Single Pulse
P1-P3P4-P6P7-P9

SI5459DU-T1-GE3

Mfr. #:
Buy SI5459DU-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs PowerPAK ChipFET
Lifecycle:
New from this manufacturer.
Delivery:
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