MC74HCU04ANG

© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 8
1 Publication Order Number:
MC74HCU04A/D
MC74HCU04A
Hex Unbuffered Inverter
High−Performance Silicon−Gate CMOS
The MC74HCU04A is identical in pinout to the LS04 and the
MC14069UB. The device inputs are compatible with standard CMOS
outputs; with pullup resistors, they are compatible with LSTTL
outputs.
This device consists of six single−stage inverters. These inverters
are well suited for use as oscillators, pulse shapers, and in many other
applications requiring a high−input impedance amplifier. For digital
applications, the HC04A is recommended.
Features
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V; 2.5 to 6.0 V in Oscillator
Configurations
Low Input Current: 1 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7.0 A Requirements
Chip Complexity: 12 FETs or 3 Equivalent Gates
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
LOGIC DIAGRAM
Y1A1
A2
A3
A4
A5
A6
Y2
Y3
Y4
Y5
Y6
1
3
5
9
11
13
2
4
6
8
10
12
Y = A
PIN 14 = V
CC
PIN 7 = GND
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See detailed ordering and shipping information on page 5 o
f
this data sheet.
ORDERING INFORMATION
MARKING DIAGRAMS
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G or G = Pb−Free Package
TSSOP−14
SOIC−14 NB
HCU04AG
AWLYWW
1
14
HCU
04A
ALYWG
G
1
14
(Note: Microdot may be in either location)
TSSOP−14
DT SUFFIX
CASE 948G
SOIC−14 NB
D SUFFIX
CASE 751A
FUNCTION TABLE
Inputs
A
L
H
Outputs
Y
H
L
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
Y5
A5
Y6
A6
V
CC
Y4
A4
Y2
A2
Y1
A1
GND
Y3
A3
MC74HCU04A
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) –0.5 to +7.0 V
V
in
DC Input Voltage (Referenced to GND) –0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) –0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ±20 mA
I
out
DC Output Current, per Pin ±25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±50 mA
P
D
Power Dissipation in Still Air SOIC Package†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature –65 to +150
_C
T
L
Lead Temperature, 1 mm from case for 10 Seconds
SOIC or TSSOP Package
260
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any
of these limits are exceeded, device functionality should not be assumed, damage may occur
and reliability may be affected.
Derating: SOIC Package: –7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
in
, V
out
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
A
Operating Temperature, All Package Types –55 +125
_C
t
r
, t
f
Input Rise and Fall Time (Figure 1) No Limit ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbo
l
Parameter Test Conditions
Guaranteed Limit
Unit
V
CC
V
–55 to
25_C
85_C 125_C
V
IH
Minimum High−Level Input
Voltage
2.0
3.0
4.5
6.0
1.7
2.5
3.6
4.8
1.7
2.5
3.6
4.8
l.7
2.5
3.6
4.8
V
V
IL
Maximum Low−Level Input
Voltage
2.0
3.0
4.5
6.0
0.3
0.5
0.8
1.1
0.3
0.5
0.8
1.1
0.3
0.5
0.8
1.1
V
V
OH
Minimum High−Level Output
Voltage
V
in
= GND
|I
out
| 20 mA
2.0
4.5
6.0
1.8
4.0
5.5
1.8
4.0
5.5
1.8
4.0
5.5
V
V
in
= GND |I
out
| 2.4 mA
|I
out
| 4.0 mA
|I
out
| 5.2 mA
3.0
4.5
6.0
2.36
3.86
5.36
2.26
3.76
5.26
2.20
3.70
5.20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. For V
CC
= 2.0 V, V
out
= 0.2 V or V
CC
− 0.2 V.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
MC74HCU04A
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3
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) (continued)
Symbol Unit
Guaranteed Limit
Test ConditionsParameter
Symbol Unit
125_C85_C
–55 to
25_C
V
CC
V
Test ConditionsParameter
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
CC
|I
out
| v 20 mA
2.0
4.5
6.0
0.2
0.5
0.5
0.2
0.5
0.5
0.2
0.5
0.5
V
V
in
= V
CC
|I
out
| 2.4 mA
|I
out
| 4.0 mA
|I
out
| 5.2 mA
3.0
4.5
6.0
0.32
0.32
0.32
0.32
0.37
0.37
0.32
0.40
0.40
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 6.0 ±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0 mA
6.0 1 10 40
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. For V
CC
= 2.0 V, V
out
= 0.2 V or V
CC
− 0.2 V.
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
Symbo
l
Parameter
V
CC
V
Guaranteed Limit
Unit
–55 to
25_C
85_C 125_C
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 2)
2.0
3.0
4.5
6.0
70
40
14
12
90
45
18
15
105
50
21
18
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
27
15
13
95
32
19
16
110
36
22
19
ns
C
in
Maximum Input Capacitance 10 10 10 pF
C
PD
Power Dissipation Capacitance (Per Inverter)*
Typical @ 25°C, V
CC
= 5.0 V
pF
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC
2
f + I
CC
V
CC
.
Figure 1. Switching Waveforms
t
r
V
CC
GND
90%
50%
10%
90%
50%
10%
INPUT A
OUTPUT Y
t
PHL
t
PLH
t
THL
t
TLH
*Includes all probe and jig capacitance
Figure 2. Test Circuit
C
L
*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 3. Logic Detail
(1/6 of Device Shown)
t
f
A
V
CC
Y

MC74HCU04ANG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC INVERTER 6CH 6-INP 14DIP
Lifecycle:
New from this manufacturer.
Delivery:
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