BC807-40-7-F

BC807-16/-25/-40
Document Number: DS11208 Rev. 19 - 2
4 of 7
www.diodes.com
October 2013
© Diodes Incorporated
BC807-16/-25/-40
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50 V
I
C
= -100µA
Collector-Emitter Breakdown Voltage
BV
CEO
-45 V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-5 V
I
C
= -100µA
Collector-Emitter Cutoff Current
I
CES
-100
-5.0
nA
µA
V
CE
= -45V
V
CE
= -25V, T
J
= +150°C
Emitter-Base Cutoff Current
I
EBO
-100 nA
V
EB
= -5.0V
DC Current Gain (Note 10)
BC807-16
BC807-25
BC807-40
h
FE
100
160
250
250
400
600
V
CE
= -1.0V, I
C
= -100mA
BC807-16
BC807-25
BC807-40
60
100
170
V
CE
= -1.0V, I
C
= -300mA
Collector-Emitter Saturation Voltage (Note 10)
V
CE(SAT)
-0.7 V
I
C
= -500mA, I
B
= -50mA
Base-Emitter Voltage (Note 10)
V
BE
-1.2 V
V
CE
= -1.0V, I
C
= -300mA
Gain Bandwidth Product
f
T
100 MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 50MHz
Collector-Base Capacitance
C
CBO
12 pF
V
CB
= -10V, f = 1.0MHz
Note: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%
BC807-16/-25/-40
Document Number: DS11208 Rev. 19 - 2
5 of 7
www.diodes.com
October 2013
© Diodes Incorporated
BC807-16/-25/-40
Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
0
100
200
300
400
500
012
-I ,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(m
A
)
C
-V , COLLECTOR-EMITTER VOLTAGE (V)
Figure 1
CE
Typical Collector Current vs. Collector-Emitter Voltage
0
20
40
60
80
100
01020
-I ,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(mA)
C
-V , COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
CE
0
0.1
0.2
0.3
0.4
0.5
110
100
1,000
-V ,
C
O
LLE
C
T
O
R
-E
M
I
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
-I , COLLECTOR CURRENT (mA)
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
-I / -I = 10
CB
150 C
°
25 C
°
-50 C
°
0.1
10
100
1,000
0.1 1 10 100 1,000
h, D
EN
AIN
FE
-I , COLLECTOR CURRENT (mA)
Figure 4 Typical DC Current Gain vs. Collector Current
C
-V = 1V
CE
150 C
°
25 C
°
-50 C
°
10
100
1,000
1 10 100 1,000
f,
G
A
IN-B
A
NDWIDTH
P
R
O
DU
C
T (
M
Hz)
T
-I , COLLECTOR CURRENT (mA)
Figure 5 Typical Gain-Bandwidth Product vs. Collector Current
C
T = 25C
f = 20MHz
A
°
-V = 5.0V
CE
1.0V
BC807-16/-25/-40
Document Number: DS11208 Rev. 19 - 2
6 of 7
www.diodes.com
October 2013
© Diodes Incorporated
BC807-16/-25/-40
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11

0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C
2.0
E
1.35
A
M
J
L
D
F
B
C
H
K
G
K1
X
E
Y
C
Z

BC807-40-7-F

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union