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BAV21W-G3-08

P1-P3P4-P4
BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 22-Feb-18
1
Document Number: 85188
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diodes, High Voltage
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Note
(1)
Valid provided that leads are kept at ambient temperature
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Available
Models
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE
TYPE
MARKING
CIRCUIT
CONFIGURATION
REMARKS
BAV19W-G V
R
= 100 V BAV19W-G3-08 or BAV19W-G3-18 AS Single Tape and reel
BAV20W-G V
R
= 150 V BAV20W-G3-08 or BAV20W-G3-18 AT Single Tape and reel
BAV21W-G V
R
= 200 V BAV21W-G3-08 or BAV21W-G3-18 AU Single Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Continuous reverse voltage
BAV19W-G V
R
100 V
BAV20W-G V
R
150 V
BAV21W-G V
R
200 V
Repetitive peak reverse voltage
BAV19W-G V
RRM
120 V
BAV20W-G V
RRM
200 V
BAV21W-G V
RRM
250 V
DC forward current
(1)
I
F
250 mA
Rectified current (average) half
wave rectification with resist. load
(1)
I
F(AV)
200 mA
Repetitive peak forward current
(1)
f t 50 Hz I
FRM
625 mA
Surge forward current t < 1 s I
FSM
1A
Power dissipation
(1)
P
tot
410 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
375 K/W
Junction temperature
(1)
T
j
150 °C
Storage temperature range
(1)
T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +150 °C
BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 22-Feb-18
2
Document Number: 85188
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA V
F
1V
I
F
= 200 mA V
F
1250 mV
Leakage current
V
R
= 100 V BAV19W-G I
R
100 nA
V
R
= 100 V, T
j
= 100 °C BAV19W-G I
R
15 μA
V
R
= 150 V BAV20W-G I
R
100 nA
V
R
= 150 V, T
j
= 100 °C BAV20W-G I
R
15 μA
V
R
= 200 V BAV21W-G I
R
100 nA
V
R
= 200 V, T
j
= 100 °C BAV21W-G I
R
15 μA
Dynamic forward resistance I
F
= 10 mA r
f
5 :
Diode capacitance V
R
= 0, f = 1 MHz C
D
1.5 pF
Reverse recovery time
I
F
= 30 mA, I
R
= 30 mA,
i
R
= 3 mA, R
L
= 100 :
t
rr
50 ns
18858
1000
100
10
1
0.1
0.01
I - Forward Current (mA)
F
0 0.4 0.6 0.8 10.2
V
F
- Forward Voltage (V)
T
j
= 100 °C
25 °C
0.1
0.2
0.3
0
0 30 60 90 120 150
18859
T
amb
- Ambient Temperature (°C)
I , I - Admissible Forward Current (A)
OF
ICurrent (rectif.)
O
DC current I
F
21937
T
amb
- Ambient Temperature (°C)
P
tot
- Admissible Power Dissipation (mW)
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140
r - Dynamic Forward Resistance
f
(Ω)
10
100
1
1 10010
18861
I
F
- Forward Current (mA)
BAV19W-G, BAV20W-G, BAV21W-G
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 22-Feb-18
3
Document Number: 85188
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Diodes Capacitance vs. Reverse Voltage
Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration
Maximum Admissible Values of Square Pulses
0.1
18862-1
1
10
100
1000
0 40 80 120 160 200
I
R
(T
j
)/I
R
(25 °C) - Leakage Current
T
j
- Junction Temperature (°C)
Reverse Voltage
BAV19W-G V
R
= 100 V
BAV20W-G V
R
= 150 V
BAV21W-G V
R
= 200 V
21942
0.8
0.6
0.4
1.4
1.2
1.0
0.2
0
C - Diode Capacitance (pF)
D
V
R
- Reverse Voltage (V)
2.0
1.8
1.6
0 5 10 15 20 25 30 35
1
10
100
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
t
p
- Test Pulse (s)
I
FSM
(A)
T
J
= 25 °C - Prior to Surge
P1-P3P4-P4

BAV21W-G3-08

Mfr. #:
Buy BAV21W-G3-08
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 250 Volt 200mA 50ns 1A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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