BA679, BA679S
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 16-May-12
1
Document Number: 85529
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RF PIN Diodes - Single in MiniMELF SOD-80
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
BA679 z
r
> 5 k BA679-GS18 or BA679-GS08 - Single diode Tape and reel
BA679S z
r
> 9 k BA679S-GS18 or BA679S-GS08 - Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PART TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
30 V
Forward continuous current I
F
50 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 20 mA V
F
1V
Reverse current V
R
= 30 V I
R
0.05 μA
Diode capacitance f = 100 MHz, V
R
= 0 V C
D
0.5 pF
Differential forward resistance f = 100 MHz, I
F
= 1.5 mA r
f
50
Reverse impedance f = 100 MHz, V
R
= 0 V
BA679 z
r
5k
BA679S z
r
9k
Minority carrier lifetime I
F
= 10 mA, I
R
= 10 mA 4μs
